IPDD60R125G7
MOSFET
600VCoolMOS™G7SJPowerDevice
PG-HDSOP-10-1
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheDDPAKpackagetoenablea
possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW.
10
6
tab
Pin 1
5
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~3nH).
•DDPAKpackageisMSL1compliant,totalPb-freeandhaseasyvisual
inspectionleads.
•DDPAKSMDpackagecombinedwithleadfreedieattachprocess
enablesimprovedthermalperformance(Rth).
Drain
Pin 6-10, Tab
*1
Gate
Pin 1
Driver
Source
Pin 2
Benefits
•C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling
fasterswitchingleadingtohigherefficiency.
•PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM
topologiesintheapplication.
•C7Goldcanreach50mΩinDDPAK115mm2footprint,whereasprevious
BICC7600Vwas40mΩin150mm2D2PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•DDPAKpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
*1: Internal body diode
Power
Source
Pin 3,4,5
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS@Tj,max
650
V
RDS(on),max
125
mΩ
Qg,typ
27
nC
ID,pulse
54
A
ID,continuous @ Tj1 Hz)
Power dissipation
Ptot
-
-
120
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
n.a.
Ncm -
IS
-
-
20
A
TC=25°C
Diode pulse current
IS,pulse
-
-
54
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
25
V/ns
VDS=0...400V,ISD
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