IPDQ60R010S7AXTMA1

IPDQ60R010S7A MOSFET 600VCoolMOSªSJS7APowerDevice PG-HDSOP-22-1 IPDQ60R010S7AisahighvoltagepowerMOSFET,designedasstatic switchaccordingtothesuperjunction(SJ)principlepioneeredbyInfineon Technologies. IPDQ60R010S7AcombinestheexperienceoftheleadingSJMOSFET supplierwithhighclassinnovationenablinglowRDS(on)inQDPAKpackage. TheS7Aseriesisoptimisedforlowfrequencyswitchingandhighcurrent applicationlikecircuitbreakers. 22 12 TAB 1 11 Features •Optimizedforlowswitchingfrequencyinhigh-endapplications(circuit breakersanddiodeparalleling/replacementinbridgerectifiers). •S7AtechnologyenablesbestinclassRDS(on)insmallestfootprint. •KelvinSourcepinimprovesswitchingperformanceathighcurrent. •QDPAK(PG-HDSOP-22-1)packageisMSL1compliant,totalPb-free, haseasyvisualinspectionleads. Drain Pin 12-22, Tab *1 Gate Pin 1 Driver Source Pin 2 Benefits *1: Internal body diode Power Source Pin 3-11 •S7AenablinglowRDS(on)forhighconstantcurrent. •IncreasedperformancebyusingMOSFETinsteadofdiodeinthe application(e.g.synchronousrectification). •S7Acanreach10mΩinQDPAK315mm2footprint. •ReducedparasiticsourceinductancebyKelvinSourceimprovesstability forextremehighcurrenthandlingandeaseofuseduetolessringing. •ImprovedthermalsenableSMDQDPAKpackagetobeusedinhigh currentdesigns. Potentialapplications Circuitbreakers(HVBatterydisconnectswitch,DCandAClowfrequency switch,HVE-fuse)anddiodeparalleling/replacementforhigh power/performanceapplications. Productvalidation QualifiedaccordingtoAECQ101 Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET devicestheplacementofthegateresistorisgenerallyrecommendedtobe ontheDriverSourceinsteadoftheGate.Forproductionpartapproval process(PPAP)releaseweproposetoshareapplicationrelated informationduringanearlydesignphasetoavoiddelaysinPPAPrelease. PleasecontactInfineonsalesoffice. Table1KeyPerformanceParameters Parameter Value Unit RDS(on),max 10 mΩ Qg,typ 318 nC VSD 0.82 V Pulsed ISD, IDS 801 A Type/OrderingCode Package IPDQ60R010S7A PG-HDSOP-22 Final Data Sheet 1 Marking RelatedLinks 60A010S7 see Appendix A Rev.2.1,2021-08-20 600VCoolMOSªSJS7APowerDevice IPDQ60R010S7A TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2021-08-20 600VCoolMOSªSJS7APowerDevice IPDQ60R010S7A 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drain current rating ID - - 50 A TC=140°C Current is limited by Tj max = 150°C; Lower case temp does increase current capability Pulsed drain current1) ID,pulse - - 801 A TC=25°C Avalanche energy, single pulse EAS - - 616 mJ ID=6.3A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 6.3 A - MOSFET dv/dt ruggedness dv/dt - - 20 V/ns VDS=0Vto300V Gate source voltage (static) VGS -20 - 20 V static Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 694 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Extended operating junction temperature Tj 150 - 175 °C ≤50 h in the application lifetime Mounting torque - - - n.a. Ncm - 2) Diode forward current rating IS - - 50 A TC=140°C Current is limited by Tj max = 150°C; Lower case temp does increase current capability Diode pulse current1) IS,pulse - - 801 A TC=25°C Reverse diode dv/dt3) dv/dt - - 5 V/ns VDS=0to300V,ISD