IPF009N04NF2SATMA1

IPF009N04NF2S MOSFET StrongIRFETTM2Power-Transistor PG-TO263-7 Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 tab 1 7 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 4, tab Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 0.9 mΩ ID 302 A Qoss 233 nC QG(0V..10V) 210 nC Gate Pin 1 Source Pin 2,3,5,6,7 Type/OrderingCode Package IPF009N04NF2S PG-TO263-7 Final Data Sheet 1 Marking RelatedLinks 009N04NS - Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 302 235 49 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RTHJA=40°C/W2) - 1208 A TA=25°C - - 1112 mJ ID=100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 3.8 W TC=25°C TA=25°C,RTHJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 0.4 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area2) - - 40 °C/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.4 V VDS=VGS,ID=249µA - 0.1 10 1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.79 0.87 0.9 1.28 mΩ VGS=10V,ID=100A VGS=6V,ID=50A Gate resistance RG - 2.5 - Ω - gfs 240 - - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 40 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current 1) Transconductance Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 15000 - pF VGS=0V,VDS=20V,f=1MHz Output capacitance Coss - 5460 - pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance Crss - 272 - pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 27 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=1.6Ω Rise time tr - 51 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=1.6Ω Turn-off delay time td(off) - 90 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=1.6Ω Fall time tf - 40 - ns VDD=20V,VGS=10V,ID=100A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 62 - nC VDD=20V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 42 - nC VDD=20V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 39 - nC VDD=20V,ID=100A,VGS=0to10V Switching charge Qsw - 59 - nC VDD=20V,ID=100A,VGS=0to10V Gate charge total Qg - 210 315 nC VDD=20V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.1 - V VDD=20V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 187 - nC VDS=0.1V,VGS=0to10V Output charge Qoss - 233 - nC VDS=20V,VGS=0V 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 231 A TC=25°C - 1208 A TC=25°C - 0.82 1 V VGS=0V,IF=100A,Tj=25°C trr - 51 - ns VR=20V,IF=100A,diF/dt=500A/µs Qrr - 288 - nC VR=20V,IF=100A,diF/dt=500A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 350 350 300 300 250 200 ID[A] Ptot[W] 250 200 150 150 100 100 50 50 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 101 10 1 µs 103 100 10 µs single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs ZthJC[K/W] 102 ID[A] 1 ms 101 10-1 10 ms 10-2 0 10 10-1 10-1 DC 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1200 1.8 6V 1000 1.6 7V 10 V 5.5 V 1.4 RDS(on)[mΩ] 800 5V ID[A] 4.5 V 600 400 1.2 5V 1.0 5.5 V 6V 4.5 V 7V 200 0 0.8 0.0 0.5 1.0 1.5 2.0 2.5 0.6 3.0 10 V 0 100 200 VDS[V] 300 400 500 600 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1200 2.0 1.8 1000 1.6 RDS(on)[mΩ] ID[A] 800 600 1.4 175 °C 1.2 400 1.0 200 0.8 25 °C 25 °C 175 °C 0 1 2 3 4 5 6 VGS[V] 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.6 RDS(on)=f(VGS),ID=100A;parameter:Tj 7 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 1.8 3.5 3.0 1.4 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 1.2 2490 µA 2.0 249 µA 1.0 1.5 0.8 0.6 -75 -50 -25 0 25 50 75 1.0 -75 100 125 150 175 200 -50 -25 0 25 Tj[°C] 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=100A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Typ.forwardcharacteristicsofreversediode 5 104 10 25 °C 175 °C 103 Ciss IF[A] C[pF] 104 Coss 102 103 101 Crss 102 0 5 10 15 20 25 30 35 40 100 0.2 0.4 0.6 VDS[V] 1.0 1.2 1.4 1.6 1.8 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.8 IF=f(VSD);parameter:Tj 8 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 8V 20 V 32 V 9 8 7 102 VGS[V] IAV[A] 6 25 °C 100 °C 5 4 1 10 3 150 °C 2 1 100 100 101 102 103 104 tAV[µs] 0 0 40 80 120 160 200 240 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 45 44 43 VBR(DSS)[V] 42 41 40 39 38 37 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S 5PackageOutlines PACKAGE - GROUP NUMBER: DIMENSIONS A A1 b c c1 D D1 E E1 e N H L L1 L2 THETA Q PG-TO263-7-U02 MILLIMETERS MIN. MAX. 4.30 4.70 0.00 0.25 0.65 0.85 0.45 0.60 1.25 1.40 9.00 9.40 6.86 7.42 9.68 10.08 7.70 8.30 1.27 7 14.61 15.88 1.78 2.79 0.00 1.60 0.00 1.78 0° - 8° 0.90 1.10 2.78 Figure1OutlinePG-TO263-7,dimensionsinmm Final Data Sheet 10 Rev.2.0,2022-10-11 StrongIRFETTM2Power-Transistor IPF009N04NF2S RevisionHistory IPF009N04NF2S Revision:2022-10-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-10-11 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. 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Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2022-10-11