IPF050N10NF2S
MOSFET
StrongIRFETTM2Power-Transistor
PG-TO263-7
Features
•Optimizedforawiderangeofapplications
•N-Channel,normallevel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
tab
1
7
Productvalidation
QualifiedaccordingtoJEDECStandard
Drain
Pin 4, tab
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
5.05
mΩ
ID
117
A
Qoss
67
nC
QG
51
nC
Gate
Pin 1
Source
Pin 2,3,5,6,7
Type/OrderingCode
Package
IPF050N10NF2S
PG-TO263-7
Final Data Sheet
1
Marking
RelatedLinks
050N10NS
-
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
117
86
77
19
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=6V,TC=100°C
VGS=10V,TA=25°C,RthJA=40°C/W2)
-
468
A
TA=25°C
-
-
100
mJ
ID=80A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
150
3.8
W
TC=25°C
TA=25°C,RthJA=40°C/W2)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
-
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
1)
Continuous drain current
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
1.0
°C/W -
Thermal resistance, junction - ambient,
RthJA
6 cm² cooling area2)
-
-
40
°C/W -
Thermal resistance, junction - ambient,
RthJA
minimal footprint
-
-
62
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3.0
3.8
V
VDS=VGS,ID=84µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
4.4
5.3
5.05
6.3
mΩ
VGS=10V,ID=60A
VGS=6V,ID=30A
Gate resistance
RG
-
1.7
-
Ω
-
gfs
56
-
-
S
|VDS|≥2|ID|RDS(on)max,ID=60A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
1)
Transconductance
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
3600
-
pF
VGS=0V,VDS=50V,f=1MHz
Output capacitance
Coss
-
570
-
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
25
-
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
14
-
ns
VDD=50V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Rise time
tr
-
47
-
ns
VDD=50V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
25
-
ns
VDD=50V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Fall time
tf
-
9
-
ns
VDD=50V,VGS=10V,ID=60A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
17
-
nC
VDD=50V,ID=60A,VGS=0to10V
Gate charge at threshold
Qg(th)
-
11
-
nC
VDD=50V,ID=60A,VGS=0to10V
Gate to drain charge
Qgd
-
11
-
nC
VDD=50V,ID=60A,VGS=0to10V
Switching charge
Qsw
-
17
-
nC
VDD=50V,ID=60A,VGS=0to10V
Gate charge total
Qg
-
51
76
nC
VDD=50V,ID=60A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.7
-
V
VDD=50V,ID=60A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
44
-
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
-
67
-
nC
VDS=50V,VGS=0V
1)
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
104
A
TC=25°C
-
468
A
TC=25°C
-
0.91
1.2
V
VGS=0V,IF=60A,Tj=25°C
trr
-
37
-
ns
VR=50V,IF=60A,diF/dt=500A/µs
Qrr
-
247
-
nC
VR=50V,IF=60A,diF/dt=500A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
5
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
125
140
100
120
75
ID[A]
Ptot[W]
100
80
50
60
40
25
20
0
0
25
50
75
100
125
150
0
175
0
25
50
TC[°C]
75
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
2
10
100
100 µs
101
ZthJC[K/W]
ID[A]
1 ms
10 ms
100
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
DC
10-2
-1
10
10-2
10-1
100
101
102
103
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
500
14
10 V
8V
7V
12
400
10
RDS(on)[mΩ]
ID[A]
300
6V
200
4.5 V
5V
8
6V
6
7V
8V
4
10 V
100
2
5V
0
4.5 V
0
1
2
3
4
0
5
0
40
80
120
VDS[V]
160
200
240
ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
500
14
12
400
10
RDS(on)[mΩ]
ID[A]
300
25 °C
200
175 °C
8
175 °C
6
4
25 °C
100
2
0
0
1
2
3
4
5
6
7
VGS[V]
0
3
6
9
12
15
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0
RDS(on)=f(VGS),ID=60A;parameter:Tj
7
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.4
4.0
3.5
840 µA
3.0
1.6
2.5
VGS(th)[V]
RDS(on)(normalizedto25°C)
2.0
1.2
2.0
84 µA
1.5
0.8
1.0
0.4
0.5
0.0
-75
-50
-25
0
25
50
75
0.0
-75
100 125 150 175 200
-50
-25
0
Tj[°C]
25
50
75
100 125 150 175 200
Tj[°C]
RDS(on)=f(Tj),ID=60A,VGS=10V
VGS(th)=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Typ.forwardcharacteristicsofreversediode
4
103
10
25 °C
175 °C
Ciss
IF[A]
102
C[pF]
103
Coss
102
101
Crss
101
0
20
40
60
80
100
100
0.00
0.25
0.50
VDS[V]
1.00
1.25
1.50
1.75
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.75
IF=f(VSD);parameter:Tj
8
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
3
10
10
20 V
50 V
80 V
8
102
VGS[V]
IAV[A]
6
25 °C
101
100 °C
4
150 °C
100
2
10-1
10-1
100
101
102
103
tAV[µs]
0
0
10
20
30
40
50
60
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=60Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
108
106
VBR(DSS)[V]
104
102
100
98
96
94
-75
-50
-25
0
25
50
75
100 125 150 175 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
5PackageOutlines
PACKAGE - GROUP
NUMBER:
DIMENSIONS
A
A1
b
c
c1
D
D1
E
E1
e
N
H
L
L1
L2
THETA
Q
PG-TO263-7-U02
MILLIMETERS
MIN.
MAX.
4.30
4.70
0.00
0.25
0.65
0.85
0.45
0.60
1.25
1.40
9.00
9.40
6.86
7.42
9.68
10.08
7.70
8.30
1.27
7
14.61
15.88
1.78
2.79
0.00
1.60
0.00
1.78
0° - 8°
0.90
1.10
2.78
Figure1OutlinePG-TO263-7,dimensionsinmm
Final Data Sheet
10
Rev.2.0,2022-09-23
StrongIRFETTM2Power-Transistor
IPF050N10NF2S
RevisionHistory
IPF050N10NF2S
Revision:2022-09-23,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2022-09-23
Release of final version
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©2022InfineonTechnologiesAG
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Final Data Sheet
11
Rev.2.0,2022-09-23