IPG16N10S461ATMA1

IPG16N10S4-61 OptiMOS™-T2 Power-Transistor Product Summary V DS 100 V R DS(on),max3) 61 mW ID 16 A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG16N10S4-61 PG-TDSON-8-4 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current one channel active ID Conditions T C=25 °C, V GS=10 V T C=100 °C, Value 16 V GS=10 V1) 11 Unit A Pulsed drain current1) one channel active I D,pulse - 64 Avalanche energy, single pulse1, 3) E AS I D=8A 33 mJ Avalanche current, single pulse3) I AS - 10 A Gate source voltage V GS - ±20 V Power dissipation one channel active P tot T C=25 °C 29 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2011-11-29 IPG16N10S4-61 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 5.2 SMD version, device on PCB R thJA minimal footprint - 100 - 6 cm2 cooling area2) - 60 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=9µA 2.0 2.8 3.5 Zero gate voltage drain current4) I DSS V DS=100V, V GS=0V, T j=25°C - 0.01 1 T j=125°C2) - 1 100 V DS=100V, V GS=0V, V µA Gate-source leakage current3) I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance3) R DS(on) V GS=10V, I D=16A - 53 61 mW Rev. 1.0 page 2 2011-11-29 IPG16N10S4-61 Parameter Symbol Values Conditions Unit min. typ. max. - 374 490 - 120 156 Dynamic characteristics1) Input capacitance3) C iss Output capacitance3) C oss Reverse transfer capacitance3) Crss - 10 20 Turn-on delay time t d(on) - 3 - Rise time tr - 1 - Turn-off delay time t d(off) - 5 - Fall time tf - 5 - Gate to source charge Q gs - 2 2.6 Gate to drain charge Q gd - 1.3 2.6 Gate charge total Qg - 5.4 7 Gate plateau voltage V plateau - 5.4 - V IS - - 16 A - - 64 V GS=0V, V DS=25V, f =1MHz V DD=50V, V GS=10V, I D=16A, R G=11W pF ns Gate Charge Characteristics1, 3) V DD=50V, I D=16A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) one channel active T C=25°C 1) Diode pulse current one channel active I S,pulse Diode forward voltage V SD V GS=0V, I F=16A, T j=25°C - 1.0 1.3 V Reverse recovery time1) t rr V R=50V, I F=I S, di F/dt =100A/µs - 50 - ns Reverse recovery charge1, 3) Q rr - 70 - nC 1) Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Per channel Rev. 1.0 page 3 2011-11-29 IPG16N10S4-61 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V; one channel active I D = f(T C); V GS ≥ 6 V; one channel active 35 20 30 15 25 I D [A] P tot [W] 20 10 15 10 5 5 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25°C; D =0; one channel active Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 100 1 µs 0.5 10 µs 10 100 0.1 Z thJC [K/W] I D [A] 100 µs 1 ms 0.05 0.01 10-1 1 single pulse 10-2 0.1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-6 page 4 2011-11-29 IPG16N10S4-61 5 Typ. output characteristics5) 6 Typ. drain-source on-state resistance5) I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 64 160 10 V 9V 8V 5V 6V 7V 56 140 48 7V 120 R DS(on) [mW] I D [A] 40 32 6V 24 100 80 16 9V 60 5V 8 10 V 0 40 0 2 4 6 8 0 16 32 V DS [V] 48 64 I D [A] 7 Typ. transfer characteristics5) 8 Typ. drain-source on-state resistance5) I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 16 A; V GS = 10 V parameter: T j 64 120 -55 °C 25 °C 56 100 48 32 R DS(on) [mW] I D [A] 40 175 °C 24 80 60 16 40 8 0 3 4 5 6 7 8 9 V GS [V] Rev. 1.0 20 -60 -20 20 60 100 140 180 T j [°C] page 5 2011-11-29 IPG16N10S4-61 9 Typ. gate threshold voltage 10 Typ. Capacitances5) V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 103 4 Ciss C [pF] 3.5 V GS(th) [V] 3 90µA 102 Coss 2.5 9µA 101 2 Crss 1.5 100 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis5) 12 Avalanche characteristics5) IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 102 100 10 I AV [A] I F [A] 25 °C 101 100 °C 150 °C 1 175 °C 25 °C 100 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 1 10 100 1000 t AV [µs] page 6 2011-11-29 IPG16N10S4-61 13 Avalanche energy5) 14 Drain-source breakdown voltage E AS = f(T j), I D = 8A V BR(DSS) = f(T j); I D = 1 mA 110 40 108 106 30 V BR(DSS) [V] E AS [mJ] 104 20 102 100 98 10 96 94 0 25 50 75 100 125 150 -60 175 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge5) 16 Gate charge waveforms V GS = f(Q gate); I D = 16 A pulsed parameter: V DD 12 V GS Qg 20 V 10 80 V V GS [V] 8 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 1 2 3 4 5 Q gate Q gd 6 Q gate [nC] Rev. 1.0 page 7 2011-11-29 IPG16N10S4-61 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2011 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2011-11-29 IPG16N10S4-61 Revision History Version Date Changes Revision 1.0 29.11.2011 Final Data Sheet Rev. 1.0 page 9 2011-11-29