IPG16N10S4L61AATMA1

IPG16N10S4L-61A OptiMOS™-T2 Power-Transistor Product Summary VDS 100 V RDS(on),max3) 61 mW ID 16 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Type Package Marking IPG16N10S4L-61A PG-TDSON-8-10 4N10L61 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current one channel active ID Conditions T C=25 °C, V GS=10 V T C=100 °C, Value 16 V GS=10 V1) 11 Unit A Pulsed drain current1) one channel active I D,pulse - 64 Avalanche energy, single pulse1, 3) E AS I D=8A 33 mJ Avalanche current, single pulse3) I AS - 10 A Gate source voltage V GS - ±16 V Power dissipation one channel active P tot T C=25 °C 29 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-30 IPG16N10S4L-61A Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1, 3) Thermal resistance, junction - case R thJC - - - 5.2 SMD version, device on PCB R thJA minimal footprint - 100 - 6 cm2 cooling area2) - 60 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=9µA 1.1 1.6 2.1 Zero gate voltage drain current3) I DSS V DS=100V, V GS=0V, T j=25°C - 0.01 1 T j=125°C2) - 1 100 V DS=100V, V GS=0V, V µA Gate-source leakage current3) I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance3) R DS(on) V GS=4.5V, I D=8A - 60 78 mW V GS=10 V, I D=16 A - 47 61 Rev. 1.0 page 2 2014-06-30 IPG16N10S4L-61A Parameter Symbol Values Conditions Unit min. typ. max. - 650 845 - 165 215 Dynamic characteristics1) Input capacitance3) C iss Output capacitance3) C oss Reverse transfer capacitance3) Crss - 12 36 Turn-on delay time t d(on) - 2 - Rise time tr - 1 - Turn-off delay time t d(off) - 5 - Fall time tf - 4 - Gate to source charge Q gs - 2.3 3.0 Gate to drain charge Q gd - 1.3 3.6 Gate charge total Qg - 8.5 11 Gate plateau voltage V plateau - 3.7 - V IS - - 16 A - - 64 V GS=0V, V DS=25V, f =1MHz V DD=50V, V GS=10V, I D=16A, R G=3.5W pF ns Gate Charge Characteristics1, 3) V DD=80V, I D=16A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) one channel active T C=25°C 1) Diode pulse current one channel active I S,pulse Diode forward voltage V SD V GS=0V, I F=16A, T j=25°C - 1.0 1.3 V Reverse recovery time1) t rr V R=50V, I F=I S, di F/dt =100A/µs - 50 - ns Reverse recovery charge1, 3) Q rr - 80 - nC 1) Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Per channel Rev. 1.0 page 3 2014-06-30 IPG16N10S4L-61A 1 Power dissipation 2 Drain current P tot = f(T C); V GS =10 V; one channel active I D = f(T C); V GS = 10 V; one channel active 35 20 30 15 20 ID [A] Ptot [W] 25 10 15 10 5 5 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25°C; D =0; one channel active Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 101 1 µs 0.5 10 µs 10 0.1 ZthJC [K/W] ID [A] 100 100 µs 1 0.05 0.01 10-1 single pulse 1 ms 0.1 10-2 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-06-30 IPG16N10S4L-61A 5 Typ. output characteristics5) 6 Typ. drain-source on-state resistance5) I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 64 160 10 V 3.5 V 4V 4.5 V 5V 56 140 48 5V 120 32 RDS(on) [mW] ID [A] 40 4.5 V 100 24 80 4V 16 3.5 V 60 8 10 V 0 40 0 1 2 3 4 5 0 16 32 VDS [V] 48 64 ID [A] 7 Typ. transfer characteristics5) 8 Typ. drain-source on-state resistance5) I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 16 A; V GS = 10 V parameter: T j 64 120 -55 °C 25 °C 56 100 48 175 °C RDS(on) [mW] ID [A] 40 32 24 80 60 16 40 8 0 1 2 3 4 5 6 VGS [V] Rev. 1.0 20 -60 -20 20 60 100 140 180 Tj [°C] page 5 2014-06-30 IPG16N10S4L-61A 9 Typ. gate threshold voltage 10 Typ. Capacitances5) V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 103 2.5 Ciss 2 C [pF] Coss 90µA VGS(th) [V] 1.5 102 9µA 1 101 Crss 0.5 100 0 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis5) 12 Avalanche characteristics5) I F = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 102 10 IAV [A] IF [A] 25 °C 101 100 °C 150 °C 1 175 °C 25 °C 0.1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2014-06-30 IPG16N10S4L-61A 13 Avalanche energy5) 14 Drain-source breakdown voltage E AS = f(T j), I D = 8A V BR(DSS) = f(T j); I D = 1 mA 110 40 108 106 30 VBR(DSS) [V] EAS [mJ] 104 20 102 100 98 10 96 94 0 25 50 75 100 125 150 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge5) 16 Gate charge waveforms V GS = f(Q gate); I D = 16 A pulsed parameter: V DD 12 V GS 80 V 8 VGS [V] Qg 20 V 10 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 2 4 6 8 Q gate Q gd 10 Qgate [nC] Rev. 1.0 page 7 2014-06-30 IPG16N10S4L-61A Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-30 IPG16N10S4L-61A Revision History Version Date Changes Revision 1.0 Rev. 1.0 30.06.2014 Data Sheet Revision 1.0 page 9 2014-06-30