IPG20N06S2L65AATMA1

IPG20N06S2L-65A OptiMOS® Power-Transistor Product Summary VDS 55 V RDS(on),max3) 65 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Type Package Marking IPG20N06S2L-65A PG-TDSON-8-10 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current one channel active1) ID Conditions Value T C=25 °C, V GS=10 V 20 T C=100 °C, V GS=10 V 14 Unit A Pulsed drain current1) one channel active I D,pulse - 80 Avalanche energy, single pulse1, 3) E AS I D=10A 40 mJ Avalanche current, single pulse3) I AS - 15 A Gate source voltage V GS - ±20 V Power dissipation one channel active P tot T C=25 °C 43 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2013-02-28 IPG20N06S2L-65A Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 3.5 SMD version, device on PCB R thJA minimal footprint - 100 - 6 cm2 cooling area2) - 60 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=14 µA 1.2 1.6 2.0 Zero gate voltage drain current3) I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current3) I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance3) R DS(on) V GS=4.5 V, I D=7.5A - 67 79 mΩ V GS=10 V, I D=15A - 53 65 Rev. 1.0 page 2 2013-02-28 IPG20N06S2L-65A Parameter Symbol Values Conditions Unit min. typ. max. - 315 410 - 90 120 Dynamic characteristics1) Input capacitance3) C iss Output capacitance3) C oss Reverse transfer capacitance3) Crss - 35 50 Turn-on delay time t d(on) - 2 - Rise time tr - 3 - Turn-off delay time t d(off) - 10 - Fall time tf - 7 - Gate to source charge Q gs - 1.2 1.6 Gate to drain charge Q gd - 3.5 5.3 Gate charge total Qg - 9.4 12 Gate plateau voltage V plateau - 3.9 - V IS - - 20 A - - 80 V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=20 A, R G=11 Ω pF ns Gate Charge Characteristics1, 3) V DD=44 V, I D=20 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) one channel active T C=25 °C 1) Diode pulse current one channel active I S,pulse Diode forward voltage V SD V GS=0 V, I F=15 A, T j=25 °C - 1.0 1.3 V Reverse recovery time1) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 30 - ns Reverse recovery charge1, 3) Q rr - 28 - nC 1) Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Per channel Rev. 1.0 page 3 2013-02-28 IPG20N06S2L-65A 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V; one channel active I D = f(T C); V GS ≥ 6 V; one channel active 25 45 40 20 35 30 ID [A] Ptot [W] 15 25 20 10 15 10 5 5 0 0 0 50 100 150 0 200 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25°C; D =0; one channel active Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 101 1 µs 0.5 10 µs 10 ZthJC [K/W] ID [A] 100 100 µs 0.1 0.05 10-1 0.01 1 ms single pulse 1 10-2 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-02-28 IPG20N06S2L-65A 5 Typ. output characteristics3) 6 Typ. drain-source on-state resistance3) I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 80 160 3.5 V 10 V 4.5 V 4V 5V 5.5 V 140 60 120 RDS(on) [mΩ] ID [A] 5V 40 4.5 V 100 80 4V 20 60 3.5 V 10 V 3V 0 40 0 1 2 3 4 5 0 20 40 VDS [V] 60 80 ID [A] 7 Typ. transfer characteristics3) 8 Typ. drain-source on-state resistance3) I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 15 A; V GS = 10 V parameter: T j 120 80 -55 °C 25 °C 100 RDS(on) [mΩ] ID [A] 60 175 °C 40 80 60 20 40 0 1 3 5 7 VGS [V] Rev. 1.0 20 -60 -20 20 60 100 140 180 Tj [°C] page 5 2013-02-28 IPG20N06S2L-65A 9 Typ. gate threshold voltage 10 Typ. Capacitances3) V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2.5 C [pF] 2 140µA VGS(th) [V] 1.5 103 14µA Ciss 1 102 Coss 0.5 Crss 101 0 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis3) 12 Avalanche characteristics3) IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 102 10 IAV [A] IF [A] 25 °C 101 175 °C 150 °C 1 25 °C 0.1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 100 °C 1 10 100 1000 tAV [µs] page 6 2013-02-28 IPG20N06S2L-65A 13 Avalanche energy3) 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 65 100 80 62 5A EAS [mJ] VBR(DSS) [V] 60 40 10 A 15 A 20 59 56 53 50 0 25 50 75 100 125 150 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge3) 16 Gate charge waveforms V GS = f(Q gate); I D = 20 A pulsed parameter: V DD 12 V GS 11 V 44 V Qg 10 VGS [V] 8 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 2 4 6 8 Q gate Q gd 10 Qgate [nC] Rev. 1.0 page 7 2013-02-28 IPG20N06S2L-65A Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2012 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2013-02-28 IPG20N06S2L-65A Revision History Version Date Changes Revision 1.0 20.09.2012 Final Data Sheet Rev. 1.0 page 9 2013-02-28