IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
™
"%&$!"# 2 Power-Transistor
Product Summary
Features
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Type
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Package
F>%JE*.+%+
F>%JE*.*%+
F>%JE**(%+
Marking
(,9D)(D
(,9D)(D
(,9D)(D
Maximum ratings, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65
Parameter
Symbol Conditions
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2 :? 4FCC6?E
I;
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Value
)((
T 9
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Unit
7
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A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
(&-
>:?:>2 =7@ @ EAC:?E
4> * 4@ @ =:?8 2 C62 -#
%
%
,(
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%
%
Thermal characteristics
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R aUA9
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Electrical characteristics, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65
Static characteristics
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Reverse Diode
:@ 56 4@ ?E:?@ FD 7@ CH2 C5 4FCC
6?E
II
:@ 56 AF=D6 4FCC
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IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
1 Power dissipation
2 Drain current
P a\a5S"T 9#
I ;5S"T 9 V >I"
/
350
120
300
100
250
200
I D [A]
P tot [W]
80
60
150
40
100
20
50
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I ;5S"V ;I T 9 U D 5(
Z aUA95S"t ]#
A2 C2 >6E6C t ]
A2 C2 >6E6C
D 5t ]'T
103
100
=:>:E
65 3 J @ ? DE2 E
6
_R`V`aN[PR
WD
WD
(&-
WD
>D
>D
102
10-1
(&)
I D [A]
Z thJC [K/W]
;9
(&*
(&((&(*
(&()
101
10-2
100
10
10-3
-1
10
0
10
1
10
2
10
3
V DS [V]
, 6G
D:?8=6 AF=D6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I ;5S"V ;I T W U
R ;I"\[#5S"I ; T W U
A2 C
2 >6E6C V >I
A2 C2 >6E6C
V >I
400
15
/
/
/
320
12
/
/
/
R DS(on) [m ]
/
I D [A]
240
/
160
9
6
/
/
/
80
3
/
/
0
0
0
1
2
3
4
5
0
50
V DS [V]
100
150
100
150
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I ;5S"V >I L
V ;Ih6*hI ;hR ;I"\[#ZNe
g S`5S"I ; T W U
A2 C
2 >6E6C T W
300
200
250
160
200
g fs [S]
I D [A]
120
150
80
100
U
U
40
50
0
0
0
2
4
6
8
V GS [V]
, 6G
0
50
I D [A]
A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R ;I"\[#5S"T W I ;
V >I
/
V >I"aU#5S"T W V >I5V ;I
A2 C2 >6E6C
I;
10
4
3.5
8
W
W
2.5
6
V GS(th) [V]
R DS(on) [m ]
3
af]
4
2
1.5
1
2
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 5S"V ;I V >I / f
' # K
I =5S"V I;#
A2 C2 >6E6C
TW
105
103
104
10
9\``
U
2
U
10
I F [A]
C [pF]
U
U
9V``
3
9_``
101
102
101
100
0
20
40
60
80
V DS [V]
, 6G
0
0.5
1
1.5
2
V SD [V]
A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
13 Avalanche characteristics
14 Typ. gate charge
I 7I5S"t 7K R >I "
V >I5S"Q TNaR I ;
AF=D65
A2 C
2 >6E6C T W"`aN_a#
A2 C2 >6E6C
V ;;
1000
12
10
/
100
8
U
V GS [V]
U
I AS [A]
/
/
U
10
6
4
2
1
0
1
10
100
1000
0
50
t AV [µs]
100
150
200
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 8H";II#5S"T W I ;
>
115
V >I
Qg
V BR(DSS) [V]
110
105
V T `"aU#
100
95
Q T "aU#
Q `d
Q T`
90
-60
-20
20
60
100
140
Q g ate
Q TQ
180
T j [°C]
, 6G
A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
PG-TO220-3: Outline
, 6G
A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
, 6G
A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
PG-TO-263 (D²-Pak)
, 6G
A2 86
IPB04CN10N G
IPI04CN10N G
IPP04CN10N G
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A2 86
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