IPI076N12N3GAKSA1

IPI076N12N3 G OptiMOSTM3 Power-Transistor IPP076N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 120 V RDS(on)max 7.6 mW ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI076N12N3 G IPP076N12N3 G Package PG-TO262-3 PG-TO220-3 Marking 076N12N 076N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 100 T C=100 °C 76 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 W 230 mJ Gate source voltage3) V GS ±20 V Power dissipation P tot 188 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.4 55/175/56 page 1 2013-09-25 IPI076N12N3 G Parameter IPP076N12N3 G Values Symbol Conditions Unit min. typ. max. - - 0.8 minimal footprint - - 62 6 cm2 cooling area5) - - 40 120 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction 4) ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=130 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 6.5 7.6 mΩ Gate resistance RG - 1.5 - W Transconductance g fs 58 116 - S 1) |V DS|>2|I D|R DS(on)max, I D=100 A J-STD20 and JESD22 2) See figure 3 3) Tjmax=150 °C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 160 140 150 120 100 gfs [S] ID [A] 100 175 °C 80 60 25 °C 50 40 20 0 0 0 2 4 6 8 VGS [V] Rev. 2.4 0 40 80 120 160 ID [A] page 5 2013-09-25 IPI076N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPP076N12N3 G parameter: I D 20 4 3.5 15 1300 µA 3 10 VGS(th) [V] RDS(on) [mW] 130 µA 2.5 98 % typ 2 1.5 5 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 25 °C Coss 103 102 25 °C, 98% IF [A] C [pF] 175 °C 175 °C, 98% Crss 102 101 101 100 0 20 40 60 80 VDS [V] Rev. 2.4 0 0.5 1 1.5 2 VSD [V] page 6 2013-09-25 IPI076N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=75 A pulsed parameter: T j(start) parameter: V DD IPP076N12N3 G 103 10 8 96 V 60 V 102 24V VGS [V] IAS [A] 6 25 °C 100 °C 4 150 °C 101 2 0 0 100 100 tAV [µs] 101 102 20 60 80 Qgate [nC] 103 15 Drain-source breakdown voltage 40 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg 130 VBR(DSS) [V] 125 120 V gs(th) 115 110 Q g(th) Q sw Q gs 105 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.4 page 7 2013-09-25 IPI076N12N3 G IPP076N12N3 G PG-TO220-3: Outline Rev. 2.4 page 8 2013-09-25 IPI076N12N3 G IPP076N12N3 G PG-TO262-3-1 (I²PAK) Rev. 2.4 page 9 2013-09-25 IPI076N12N3 G IPP076N12N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 10 2013-09-25