IPI80CN10N G

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS(on),max (TO252) 78 m: ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 PG-TO251-3 Marking 79CN10N 78CN10N 80CN10N 80CN10N 78CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 13 T C=100 °C 9 Unit A Pulsed drain current2) I D,pulse T C=25 °C 52 Avalanche energy, single pulse E AS I D=13 A, R GS=25 : 17 mJ Gate source voltage3) V GS ±20 V Power dissipation P tot 31 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 55/175/56 J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max, I D=13 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.04 page 2 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Parameter Values Symbol Conditions Unit min. typ. max. - 538 716 - 76 101 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=50 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 8 12 Turn-on delay time t d(on) - 9 13 Rise time tr - 4 6 Turn-off delay time t d(off) - 13 18 Fall time tf - 3 4 Gate to source charge Q gs - 3 4 Gate to drain charge Q gd - 2 3 - 3 5 V DD=50 V, V GS=10 V, I D=13 A, R G=2.4 : pF ns Gate Charge Characteristics 5) V DD=50 V, I D=13 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 8 11 Gate plateau voltage V plateau - 5.7 - Output charge Q oss - 8 10 nC - - 13 A - - 52 - 1 1.2 V - 67 - ns - 114 - nC V DD=50 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=13 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/μs See figure 16 for gate charge parameter definition Rev. 1.04 page 3 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS•10 V 40 15 30 I D [A] P tot [W] 10 20 5 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 10 1 μs 10 μs 0.5 Z thJC [K/W] 100 μs 101 I D [A] 1 ms 0.2 1 0.1 0.05 100 10 ms 0.02 DC 0.01 single pulse 10-1 10-1 0.1 100 101 102 103 t p [s] V DS [V] Rev. 1.04 page 4 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 200 180 160 10 V 140 40 5V R DS(on) [m:] I D [A] 8V 7V 5.5 V 6V 6.5 V 7V 120 100 80 8V 6.5 V 20 10 V 60 6V 40 5.5 V 20 5V 4.5 V 0 0 0 1 2 3 4 5 0 10 20 V DS [V] 30 40 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 30 20 25 15 g fs [S] I D [A] 20 15 10 10 175 °C 5 25 °C 5 0 0 0 2 4 6 8 Rev. 1.04 0 10 20 30 I D [A] V GS [V] page 5 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=13 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 180 4 160 3.5 140 120 μA 3 12 μA 2.5 100 V GS(th) [V] R DS(on) [m:] 120 98 % 80 typ 2 1.5 60 1 40 0.5 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 100 Ciss 25 °C 175 °C 175 °C, 98% Coss 102 I F [A] C [pF] 10 Crss 101 1 100 0.1 0 20 40 60 80 0 0.5 1 1.5 2 V SD [V] V DS [V] Rev. 1.04 25 °C, 98% page 6 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 : V GS=f(Q gate); I D=13 A pulsed parameter: T j(start) parameter: V DD 100 12 50 V 10 80 V 20 V V GS [V] I AS [A] 8 10 6 4 25 °C 100 °C 150 °C 2 1 0 1 10 100 1000 0 2 4 6 8 10 Q gate [nC] t AV [μs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 115 V GS Qg V BR(DSS) [V] 110 105 V g s(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.04 page 7 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO220-3: Outline Rev. 1.04 page 8 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO-263-3 (D²-Pak) Rev. 1.04 page 9 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Rev. 1.04 page 10 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO252-3: Outline PG-TO252-3: Outline Rev. 1.04 page 11 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO251-3: Outline Rev. 1.04 page 12 2007-08-29 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.04 page 13 2007-08-29