IPI80N08S406AKSA1

IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS™-T2 Power-Transistor Product Summary V DS 80 V R DS(on),max (SMD version) 5.5 mW ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N08S4-06 PG-TO263-3-2 4N0806 IPI80N08S4-06 PG-TO262-3-1 4N0806 IPP80N08S4-06 PG-TO220-3-1 4N0806 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 80 T C=100°C, V GS=10V2) 80 Unit A Pulsed drain current2) I D,pulse T C=25°C 320 Avalanche energy, single pulse2) E AS I D=40A 270 mJ Avalanche current, single pulse I AS - 75 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 150 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 1.0 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=90µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=80V, V GS=0V - 0.01 1 T j=125°C2) - 5 100 V DS=80V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=80A - 5.0 5.8 mW V GS=10V, I D=80A, SMD version - 4.7 5.5 Rev. 1.0 page 2 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Parameter Symbol Values Conditions Unit min. typ. max. - 3600 4800 - 1400 1860 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 75 150 Turn-on delay time t d(on) - 12 - Rise time tr - 7 - Turn-off delay time t d(off) - 20 - Fall time tf - 25 - Gate to source charge Q gs - 18 24 Gate to drain charge Q gd - 12 24 Gate charge total Qg - 52 70 Gate plateau voltage V plateau - 5.2 - V - - 80 A - - 320 V GS=0V, V DS=25V, f =1MHz V DD=40V, V GS=10V, I D=80A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=64V, I D=80A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=80A, T j=25°C - 0.9 1.3 V Reverse recovery time2) t rr V R=40V, I F=50A, di F/dt =100A/µs - 90 - ns Reverse recovery charge2) Q rr - 60 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 1.0K/W the chip is able to carry 118A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS = 10 V; SMD 160 100 140 80 120 60 I D [A] P tot [W] 100 80 40 60 40 20 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 101 1000 1 µs 10 µs 100 100 µs 100 1 ms I D [A] Z thJC [K/W] 0.5 10-1 0.1 0.05 10 0.01 -2 10 1 0.1 1 10 100 10-3 10-6 single pulse 10-5 10-4 -3 t 10 p [s] 10-2 10-1 100 V DS [V] Rev. 1.0 page 4 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 320 15 10 V 7V 5V 5.5 V 6V 6.5 V 280 13 6.5 V 240 11 R DS(on) [mW] I D [A] 200 6V 160 9 120 5.5 V 7 7V 80 5V 5 10 V 40 0 3 0 1 2 3 4 5 0 80 160 V DS [V] 240 320 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD parameter: T j 320 10 -55 °C 280 25 °C 240 8 175 °C R DS(on) [mW] I D [A] 200 160 120 80 6 4 40 0 3 4 5 6 7 -60 -20 20 60 100 140 180 T j [°C] V GS [V] Rev. 1.0 2 page 5 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 C [pF] Coss 3 V GS(th) [V] 900 µA 2.5 103 90 µA Crss 102 2 1.5 1 101 -60 -20 20 60 100 140 0 180 20 40 T j [°C] 60 80 V DS [V] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 103 100 25 °C 100 °C 150 °C I F [A] I AV [A] 102 175 °C 10 25 °C 175 °C 25 °C 1 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 1 10 100 1000 t AV [µs] page 6 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 88 1100 1000 86 19 A 900 84 800 82 V BR(DSS) [V] E AS [mJ] 700 600 500 38 A 80 78 400 300 76 75 A 200 74 100 72 0 25 75 125 -55 175 -15 25 65 105 145 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 10 V GS 9 Qg 8 16 V 64 V 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 10 20 30 40 50 Q gate Q gd 60 Q gate [nC] Rev. 1.0 page 7 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-20 IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Revision History Version Date Changes Revision 1.0 Rev. 1.0 20.06.2014 Final data sheet page 9 2014-06-20