IPL60R065C7AUMA1

IPL60R065C7 MOSFET 600VCoolMOSªC7PowerTransistor ThinPAK8x8 CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm². Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •SMDpackagewithverylowparasiticinductanceforeasydevicecontrol •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •4pinkelvinsourceconcept Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 Benefits •IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •OptimizedPCBassemblyandlayoutsolutions •Suitableforapplicationssuchasserver,telecomandsolar •Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional 3pinpackage Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 65 mΩ Qg,typ 68 nC ID,pulse 135 A ID,continuous @ Tj1 Hz) Power dissipation Ptot - - 180 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 29 A TC=25°C Diode pulse current IS,pulse - - 135 A TC=25°C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD