IPL60R199CP
MOSFET
600VCoolMOSªCPPowerTransistor
ThinPAK8x8
TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofa
fastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylow
switchingandconductionlossesmakeswitchingapplicationsevenmore
efficient,morecompact,lighter,andcooler..
ThinPAK
ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew
packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe
D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe
D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark
lowparasiticinductances,providesdesignerswithanewandeffectiveway
todecreasesystemsolutionsizeinpower-densitydrivendesigns.
Drain
Pin 5
Features
•Reducedboardspaceconsumption
•Increasedpowerdensity
•Shortcommutationloop
•Smoothswitchingwaveform
•easytouseproducts
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•QuallfiedaccordingtoJEDEC(J-STD20andJESD22)fortarget
applications(Server,Adapter)
•Pb-freeplating,Halogenfree
Gate
Pin 1
Driver
Source
Pin 2
Power
Source
Pin 3,4
Potentialapplications
Server,Adapter
Table1KeyPerformanceParameters
Parameter
Value
Unit
Vds @ Tjmax
650
V
RDS(on),max
0.199
Ω
Qg,typ
32
nC
ID,pulse
63
A
Eoss @ 400V
6.1
µJ
Body diode diF/dt
200
A/µs
Type/OrderingCode
Package
Marking
IPL60R199CP
PG-VSON-4
6R199P
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.4,2017-09-06
600VCoolMOSªCPPowerTransistor
IPL60R199CP
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.4,2017-09-06
600VCoolMOSªCPPowerTransistor
IPL60R199CP
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current2)
Values
Unit
Note/TestCondition
16.4
10.0
A
TC = 25°C
TC = 100°C
-
63
A
TC=25 °C
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
EAS
-
-
436
mJ
ID =6.6 A; VDD = 50 V
3)
EAR
-
-
0.66
mJ
ID =6.6 A; VDD = 50 V
3)
Avalanche current, repetitive
IAR
-
-
6.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation
Ptot
-
-
139
W
TC=25°C
Operating Temperature
Tj
-40
-
150
°C
-
Storage Temperature
Tstg
-40
-
125
°C
-
Continuous diode forward current
IS
-
-
16.4
A
TC=25°C
Diode pulse current
IS,pulse
-
-
63
A
TC = 25°C
Reverse diode dv/dt4)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
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