IPL60R385CP

IPL60R385CP MOSFET 600VCoolMOSªCPPowerTransistor ThinPAK8x8 TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofa fastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylow switchingandconductionlossesmakeswitchingapplicationsevenmore efficient,morecompact,lighter,andcooler.. ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Features •Reducedboardspaceconsumption •Increasedpowerdensity •Shortcommutationloop •Smoothswitchingwaveform •easytouseproducts •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •QuallfiedaccordingtoJEDEC(J-STD20andJESD22)fortarget applications(Server,Adapter) •Pb-freeplating,Halogenfree Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 Potentialapplications Server,Adapter Table1KeyPerformanceParameters Parameter Value Unit Vds @ Tjmax 650 V RDS(on),max 0.385 Ω Qg,typ 17 nC ID,pulse 27 A Eoss @ 400V 3.2 µJ Body diode diF/dt 400 A/µs Type/OrderingCode Package Marking IPL60R385CP PG-VSON-4 6R385P Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.2,2017-09-06 600VCoolMOSªCPPowerTransistor IPL60R385CP TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2017-09-06 600VCoolMOSªCPPowerTransistor IPL60R385CP 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Values Unit Note/TestCondition 9 5.7 A TC = 25°C TC = 100°C - 27 A TC=25 °C Min. Typ. Max. ID - - ID,pulse - EAS - - 227 mJ ID =3.4 A; VDD = 50 V 3) EAR - - 0.34 mJ ID =3.4 A; VDD = 50 V 3) Avalanche current, repetitive IAR - - 3.4 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 83 W TC=25°C Operating Temperature Tj -40 - 150 °C - Storage Temperature Tstg -40 - 125 °C - Continuous diode forward current IS - - 9.0 A TC=25°C Diode pulse current IS,pulse - - 27 A TC = 25°C Reverse diode dv/dt4) dv/dt - - 15 V/ns VDS=0...400V,ISD