IPL65R070C7AUMA1

IPL65R070C7 MOSFET 650VCoolMOSªC7PowerTransistor ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density •Easytouse/driveduetodriversourcepinforbettercontrolofthegate. •Pb-freeplating,halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 Benefits •Enablinghighersystemefficiencybylowerswitchinglosses •Enablinghigherfrequency/increasedpowerdensitysolutions •Systemcost/sizesavingsduetoreducedcoolingrequirements •Highersystemreliabilityduetoloweroperatingtemperatures Potentialapplications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 70 mΩ Qg,typ 64 nC ID,pulse 145 A Eoss @ 400V 8 µJ Body diode diF/dt 60 A/µs Type/OrderingCode Package Marking IPL65R070C7 PG-VSON-4 65C7070 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.1,2017-08-29 650VCoolMOSªC7PowerTransistor IPL65R070C7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2017-08-29 650VCoolMOSªC7PowerTransistor IPL65R070C7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 28 20 A TC=25°C TC=100°C - 145 A TC=25°C - - 171 mJ ID=10.2A; VDD=50V; see table 10 EAR - - 0.85 mJ ID=10.2A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 10.2 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 169 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - n.a. Ncm - IS - - 28 A TC=25°C Diode pulse current IS,pulse - - 145 A TC=25°C Reverse diode dv/dt3) dv/dt - - 1.5 V/ns VDS=0...400V,ISD