IPL65R660E6AUMA1

IPL65R660E6 MOSFET 650VCoolMOSªE6PowerTransistor ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™E6series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whileofferinganextremelyfastandrobustbodydiode.Thiscombination ofextremelylowswitching,commutationandconductionlossestogether withhighestrobustnessmakeespeciallyresonantswitchingapplications morereliable,moreefficient,lighterandcooler. ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 Features •Reducedboardspaceconsumption •Increasedpowerdensity •Shortcommutationloop •Smoothswitchingwaveform •easytouseproducts •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Pb-freeplating,Halogenfree •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCDTV,Lighting,Server,Telecom. Table1KeyPerformanceParameters Parameter Value Unit Vds @ Tjmax 700 V RDS(on),max 0.66 Ω Qg,typ 23 nC ID,pulse 16 A Eoss @ 400V 1.9 µJ Body diode diF/dt 500 A/µs Type/OrderingCode Package Marking IPL65R660E6 PG-VSON-4 65E6660 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.2,2017-08-30 650VCoolMOSªE6PowerTransistor IPL65R660E6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2017-08-30 650VCoolMOSªE6PowerTransistor IPL65R660E6 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 7 4.4 A TC = 25°C TC = 100°C - 16 A TC=25 °C - - 142 mJ ID =1.3 A; VDD = 50 V EAR - - 0.21 mJ ID =1.3 A; VDD = 50 V Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 63 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 6.0 A TC=25°C Diode pulse current IS,pulse - - 16 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD