IPL65R725CFDAUMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD 1Description ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™CFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighterand cooler. ThinPAK ThinPAKisanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Features Power Source Pin 3,4 •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Easytouse/drive •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) •Pb-freeplating,Halogenfreemoldcompound Applications 650VCoolMOS™CFD2isespeciallysuitableforresonantswitching stagesfore.g.PCSilverbox,LCDTV,Lighting,ServerandTelecom Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.725 Ω Qg,typ 20 nC ID,pulse 15.6 A Eoss @ 400V 1.9 µJ Body diode di/dt 900 A/µs Qrr 0.2 µC trr 65 ns Irrm 4.5 A Type/OrderingCode Package Marking IPL65R725CFD PG-VSON-4 65F6725 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2013-05-28 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2013-05-28 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) ID Values Min. Typ. Max. 5.8 Unit Note/TestCondition A TC=25°C TC=100°C 3.6 ID‚pulse 15.6 A TC=25°C Avalanche energy, single pulse EAS 141 mJ ID=1.2A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.21 mJ ID=1.2A,VDD=50V Avalanche current, repetitive IAR 1.2 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 -40 150 °C Pulsed drain current 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 5.8 A TC=25°C Diode pulse current IS‚pulse 15.6 A TC=25°C Reverse diode dv/dt 3) dv/dt 50 V/ns Maximum diode commutation speed dif/dt 900 A/µs VDS=0...400V,ISD≤ID, Tj=25°C (see table 8) Power dissipation Ptot 62.5 W TC=25°C 1) Limited by Tj max. Pulse width tp limited by Tj max 3) Vpeak