IPLK60R1K5PFD7ATMA1

IPLK60R1K5PFD7 MOSFET 600VCoolMOSªPFD7SJPowerDevice ThinPAK5x6 8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™PFD7isanoptimizedplatformtailoredtotarget costsensitiveapplicationsinconsumermarketssuchascharger,adapter, motordrive,lighting,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. 7 6 5 1 2 3 4 *1: Internal body diode *2: Internal ESD diode Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •LowswitchinglossesEoss,excellentthermalbehavior •Fastbodydiode •WiderangeportfolioofRDS(on)andpackagevariations •Integratedzenerdiode Drain Pin 5,6,7,8 Gate Pin 4 *1 *2 Kelvin Source Pin 3 Source Pin 1,2 Benefits •Enableshighpowerdensitydesignsandsmallformfactors •Enablesefficiencygainsathigherswitchingfrequencies •Excellentcommutationruggedness •Easytoselectrightpartsandoptimizethedesign •HighESDruggedness Potentialapplications RecommendedforZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 1500 mΩ Qg,typ 4.6 nC ID,pulse 6.0 A Eoss @ 400V 0.5 µJ Body diode diF/dt 1300 A/µs ESD Class (HBM) 2 - Type/OrderingCode Package IPLK60R1K5PFD7 ThinPAK 5x6 SMD Final Data Sheet Marking 60R1K5D7 1 RelatedLinks see Appendix A Rev.2.0,2020-01-22 600VCoolMOSªPFD7SJPowerDevice IPLK60R1K5PFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2020-01-22 600VCoolMOSªPFD7SJPowerDevice IPLK60R1K5PFD7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 3.8 2.4 A TC=25°C TC=100°C - 6.0 A TC=25°C - - 7 mJ ID=0.7A; VDD=50V; see table 10 EAR - - 0.04 mJ ID=0.7A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 0.7 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 25 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - - - - - Ncm - IS - - 3.8 A TC=25°C Diode pulse current IS,pulse - - 6.0 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD