IPLU300N04S41R1XTMA1

IPLU300N04S4-1R1 OptiMOS™-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.15 mW ID 300 A Features H-PSOF-8-1 • N-channel - Enhancement mode Tab • AEC qualified 8 • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green product (RoHS compliant); 100% lead free Tab 1 8 • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPLU300N04S4-1R1 H-PSOF-8-1 4N041R1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, Value 300 V GS=10 V2) 277 Unit A Pulsed drain current2) I D,pulse T C=25 °C 1200 Avalanche energy, single pulse2) E AS I D=150 A 300 mJ Avalanche current, single pulse I AS - 300 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-11-21 IPLU300N04S4-1R1 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.5 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=125 µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 10 T j=85 °C2) - 1 20 V DS=18 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=100 A - 0.83 1.15 mΩ Rev. 1.0 page 2 2014-11-21 IPLU300N04S4-1R1 Parameter Symbol Values Conditions Unit min. typ. max. - 9300 12090 pF - 2070 2700 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 70 160 Turn-on delay time t d(on) - 30 - Rise time tr - 25 - Turn-off delay time t d(off) - 30 - Fall time tf - 35 - Gate to source charge Q gs - 52 68 Gate to drain charge Q gd - 16 37 Gate charge total Qg - 116 151 Gate plateau voltage V plateau - 5.6 - V - - 300 A - - 1200 - 0.9 1.3 V - 65 - ns - 85 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=300 A, R G=3.5 W ns Gate Charge Characteristics2) V DD=32 V, I D=300 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=20 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 392A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-11-21 IPLU300N04S4-1R1 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS =10 V 400 350 300 300 200 ID [A] Ptot [W] 250 200 150 100 100 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 10000 100 0.5 1 µs 1000 10 µs 10-1 0.1 ZthJC [K/W] ID [A] 100 µs 100 1 ms 0.05 0.01 10-2 single pulse 10 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-11-21 IPLU300N04S4-1R1 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 8 1200 10 V 6V 5V 6.5 V 7V 1000 7V 6 RDS(on) [mW] 800 ID [A] 6.5 V 600 4 6V 400 2 200 10 V 5V 0 0 0 1 2 3 0 4 300 600 900 1200 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 1200 -55 °C 25 °C 1.4 1000 1.2 175 °C RDS(on) [mW] ID [A] 800 600 1 0.8 400 0.6 200 0.4 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2014-11-21 IPLU300N04S4-1R1 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 104 C [pF] VGS(th) [V] Ciss 1250 µA 3 125 µA 2.5 Coss 103 2 1.5 Crss 102 1 -60 -20 20 60 100 140 0 180 5 10 15 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 1000 104 25 °C 103 100 100 °C IAV [A] IF [A] 20 102 175 °C 150 °C 25 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2014-11-21 IPLU300N04S4-1R1 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 44 600 43 400 42 VBR(DSS) [V] EAS [mJ] 75 A 500 300 150 A 41 40 200 300 A 39 100 38 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 300 A pulsed parameter: V DD 12 V GS 10 Qg 8V 32 V VGS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 40 80 120 Qgate [nC] Rev. 1.0 page 7 2014-11-21 IPLU300N04S4-1R1 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-11-21 IPLU300N04S4-1R1 Revision History Version Date Changes Revision 1.0 Rev. 1.0 21.11.2014 Final Data Sheet page 9 2014-11-21