IPN95R3K7P7ATMA1

IPN95R3K7P7 MOSFET 950VCoolMOSªP7SJPowerDevice PG-SOT223 Thelatest950VCoolMOS™P7seriessetsanewbenchmarkin950V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation. Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classSOT-223RDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability •Fullyoptimizedportfolio Drain Pin 2 Benefits *1 Gate Pin 1 •Best-in-classperformance •Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel •BetterproductionyieldbyreducingESDrelatedfailures •Lessproductionissuesandreducedfieldreturns •Easytoselectrightpartsforfinetuningofdesigns *2 *1: Internal body diode *2: Integrated ESD diode Source Pin 3 Potentialapplications RecommendedforflybacktopologiesforLEDLighting,lowpower ChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower. AlsosuitableforPFCstageinConsumerandSolarapplications. ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 950 V RDS(on),max 3.7 Ω Qg,typ 6 nC ID 2 A Eoss @ 500V 0.5 µJ VGS(th),typ 3 V ESD class (HBM) 1C - Type/OrderingCode Package Marking IPN95R3K7P7 PG-SOT223 95R3K7 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.0,2018-06-01 950VCoolMOSªP7SJPowerDevice IPN95R3K7P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2018-06-01 950VCoolMOSªP7SJPowerDevice IPN95R3K7P7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 2 1.4 A TC=25°C TC=100°C - 5 A TC=25°C - - 2 mJ ID=0.2A; VDD=50V; see table 10 EAR - - 0.04 mJ ID=0.2A; VDD=50V; see table 10 Application (Flyback) relevant avalanche current, single pulse3) IAS - 1.8 - A measured with standard leakage inductance of transformer of 10µH MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 6 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - - Ncm - IS - - 0.8 A TC=25°C Diode pulse current IS,pulse - - 5 A TC=25°C Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD