IPP023N04NGXKSA1

IPP023N04N G Ie]R IPB023N04N G ™ "%&$!"# 3 Power-Transistor Product Summary Features Q & ( ,  - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 ) @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R  , @? >2 H *&+ Z" I9 1( 6 Q' 492 ? ? 6= Q' @B> 2 == 6F6= Q. = DB2 = @G @? B6C:CD2 ? 46 R 9H"\[# Q     F2 = 2 ? 496 D6CD65 Q ) 3 7B66 A= 2D :? 8 + @" , 4@> A= :2 ? D Q" 2 = @86? 7B66 2 44@B5:? 8 D@ #        Type #)     '   ' ! #) )    '   ' ! Package E=%ID*.+%+ E=%ID**(%+ Marking (*+C(,C (*+C(,C Maximum ratings, 2 DT W   T  E? = 6CC @D96BG:C6 CA64:7:65 Parameter Symbol Conditions  @? D :? E@EC 5B 2 :? 4EBB6? D I9 Value V =H  /  T 8   T 1( V =H  /  T 8   T 1( Unit 6 ) E= C65 5B2 :? 4EBB6? D*# I 9$]aY_R T 8   T ,((  F2 = 2 ? 496 4EBB6? D C:? 8= 6 AE= C6+# I 6H T 8   T 1(  F2 = 2 ? 496 6? 6B8I C:? 8= 6 AE= C6 E 6H I 9     R =H   " )-( Z@ !2 D6 C@EB46 F@= D2 86 V =H q*( K )# + 6F  $ , -   2 ? 5 $  ,    A2 86      IPP023N04N G IPB023N04N G Maximum ratings, 2 DT W   T  E? = 6CC @D96BG:C6 CA64:7:65 Parameter Symbol Conditions ) @G6B5:CC:A2 D:@? P `\` ( A6B2 D:? 8 2 ? 5 CD@B 2 86 D6> A6B2 DEB6 T W T _`T Value T 8   T #  4= :> 2 D :4 42 D68@BI  #' #    Parameter Unit )./ L     T        Values Symbol Conditions Unit min. typ. max. % % (&1  % % ,( ,( % % Thermal characteristics -96B> 2 =B6C:CD2 ? 46 ;E? 4D:@? 42 C6 R `U@8 , &  F6BC:@?  56F:46 @? )   R `U@6 > :? :> 2 =7@@DAB:? D  4> V 4@@= :? 8 2 B62 ,# A'L Electrical characteristics, 2 DT W   T  E? = 6CC @D96BG:C6 CA64:7:65 Static characteristics  B2 :? C@EB46 3 B62  @? 6 = 2 I6B   W > D9:4 5B 2 :? D 23 D @ C@EB46 A:? A2 86       IPP023N04N G IPB023N04N G Parameter Values Symbol Conditions Unit min. typ. max. % /+(( )(((( ]< % *((( */(( Dynamic characteristics #? AED42 A2 4:D2 ? 46 C V__ ( EDAED42 A2 4:D2 ? 46 C \__ + 6F6BC6 DB2 ? C76B42 A2 4:D2 ? 46 8^__ % // % -EB? @? 56= 2 I D:> 6 t Q"\[# % */ % + :C6 D:> 6 t^ % .&. % -EB? @7756= 2 I D:> 6 t Q"\SS# % ,( % tS % /&0 % !2 D6 D@ C@EB46 492 B86 Q T_ % +- % !2 D6 492 B86 2 DD9B6C9@= 5 Q T"`U# % ** % !2 D6 D@ 5B2 :? 492 B86 Q TQ % )) % , G:D49:? 8 492 B86 Q _c % *, % !2 D6 492 B86 D@D 2= QT % 1( )*( !2 D6 A= 2 D62 E F@= D 2 86 V ]YN`RNa % ,&0 % K !2 D6 492 B86 D@D 2=  CI? 4  - Q T"_e[P# V 9H  /  V =H  D@  / % 0- % [8 ( EDAED492 B86 Q \__ V 99   /  V =H  / % /+ % % % 1( % % ,(( 2= =D:> 6 V =H  /  V 9H   /  f & " J V 99   /  V =H  /  I 9     R =  " [_ !2 D6  92 BT6  92 B2 4D6B:CD :4C.# V 99   /  I 9     V =H  D@  / [8 Reverse Diode  :@56 4@? D:? E@EC 7@BG2 B5 4EBB6? D IH 6 T 8   T  :@56 AE= C6 4EBB 6? D I H$]aY_R  :@56 7@BG2 B5 F@= D2 86 V H9 V =H  /  I :D 65 3 I @? CD2 D 6 ^R_V_`N[PR WC (&-  WC (&*  W C 10-1 Z thJC [K/W] 102 I D [A] 98 >C (&) (&((&(* (&()  >C 101 10-2 100 10 10-3 -1 10 0 10 1 10 2 V DS [V] + 6F  C:? 8= 6 AE= C6 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86       IPP023N04N G IPB023N04N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I 94S"V 9H T W   T R 9H"\[#4S"I 9 T W   T A2 B 2 > 6D6B V =H A2 B2 > 6D6B  V =H 400 4  /  /   /   / 300  / 3 R DS(on) [m ] I D [A]   /  / 200   / 100  / 2  / 1  / 0 0 0 1 2 3 0 40 80 V DS [V] 120 160 200 160 200 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I 94S"V =H KV 9Hg5*gI 9gR 9H"\[#ZNd g S_4S"I 9 T W   T A2 B 2 > 6D6B T W 400 250 200 300 g fs [S] I D [A] 150 200 100 100 50   T   T 0 0 0 1 2 3 4 5 6 7 + 6F  0 40 80 120 I D [A] V GS [V] A2 86       IPP023N04N G IPB023N04N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R 9H"\[#4S"T W I 9     V =H  / V =H"`U#4S"T W V =H4V 9H I 9    #6 5 4 4 3 V GS(th) [V] R DS(on) [m ] 3   2 2 `e] 1 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 4S"V 9H V =H  /  f  & " J I 6D6B T W"_`N^`# A2 B2 > 6D6B  V 99 100 12   T   T  /   T 10  /  / V GS [V] I AV [A] 8 10 6 4 2 1 0 10-1 100 101 102 103 0 20 t AV [µs] 40 60 80 100 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 7G"9HH#4S"T W I 9 >  45 V =H Qg V BR(DSS) [V] 40 35 V T _"`U# 30 25 Q T "`U# Q _c Q T_ 20 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] + 6F  A2 86       IPP023N04N G IPB023N04N G Package Outline Footprint: + 6F  PG-TO263-3 Packaging: A2 86       IPP023N04N G IPB023N04N G Package Outline + 6F  PG-TO220-3 A2 86       IPP023N04N G IPB023N04N G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. + 6F  A2 86