IPP029N06N

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPP029N06N DataSheet Rev.2.6 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPP029N06N 1Description TO-220-3 tab Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.9 mΩ ID 100 A QOSS 65 nC QG(0V..10V) 56 nC Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPP029N06N PG-TO220-3 029N06N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 100 100 24 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W - 400 A TC=25°C - - 110 mJ ID=100A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 136 3.0 W TC=25°C TA=25°C,RthJA=50K/W Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.7 1.1 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area3) RthJA - - 40 K/W - Soldering temperature, wave and reflow soldering are allowed Tsold - - 260 °C Reflow MSL1 1) See figure 3 for more detailed information See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.8 3.3 V VDS=VGS,ID=75µA - 0.5 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.7 3.3 2.9 4.4 mΩ VGS=10V,ID=100A VGS=6V,ID=25A Gate resistance1) RG 0.65 1.3 1.95 Ω - Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.1 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4100 5125 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 980 1225 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 39 78 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 17 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω Rise time tr - 15 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω Turn-off delay time td(off) - 30 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω Fall time tf - 8 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Gate charge at threshold Values Unit Note/TestCondition - nC VDD=30V,ID=100A,VGS=0to10V 11 - nC VDD=30V,ID=100A,VGS=0to10V - 11 15 nC VDD=30V,ID=100A,VGS=0to10V Qsw - 19 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total Qg - 56 66 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10V Qoss - 65 82 nC VDD=30V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 20 Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Values Min. Typ. Max. IS - - 120 A TC=25°C IS,pulse - - 480 A TC=25°C VSD - 1.0 1.2 V VGS=0V,IF=100A,Tj=25°C Reverse recovery time trr - 54 86 ns VR=30V,IF=100A,diF/dt=100A/µs Reverse recovery charge Qrr - 77 - nC VR=30V,IF=100A,diF/dt=100A/µs Diode forward voltage 2) 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 6 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 160 120 140 100 120 80 ID[A] Ptot[W] 100 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 2 10 100 µs 1 ms DC 0.5 ZthJC[K/W] ID[A] 100 101 10 ms 0.2 0.1 10 -1 0.05 0.02 0.01 0 10 single pulse 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N Diagram5:Typ.outputcharacteristics 400 10 V Diagram6:Typ.drain-sourceonresistance 8 7V 5V 360 5.5 V 6V 7 6V 320 6 280 5 RDS(on)[mΩ] ID[A] 240 5.5 V 200 160 4 7V 3 10 V 120 5V 2 80 1 40 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 80 160 VDS[V] 240 320 400 80 100 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 200 360 320 150 280 gfs[S] ID[A] 240 200 100 160 120 50 80 40 0 175 °C 0 2 25 °C 4 6 8 0 0 VGS[V] 40 60 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 8 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 7.0 5 6.5 6.0 4 5.5 5.0 3 4.0 VGS(th)[V] RDS(on)[mΩ] 4.5 max 3.5 3.0 typ 750 µA 75 µA 2 2.5 2.0 1.5 1 1.0 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=100A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 103 12 30 V 10 12 V 102 48 V 8 VGS[V] IAV[A] 100 °C 25 °C 125 °C 101 6 4 2 100 100 101 102 103 0 0 10 tAV[µs] 20 30 40 50 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N 6PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.6,2015-02-10 OptiMOSTMPower-Transistor,60V IPP029N06N RevisionHistory IPP029N06N Revision:2015-02-10,Rev.2.6 Previous Revision Revision Date Subjects (major changes since last revision) 2.5 2014-07-25 Rev.2.5 2.6 2015-02-10 Insert Rg min value = 0.65 Ohm WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.6,2015-02-10