IPP030N10N3GXKSA1

IPP030N10N3 G OptiMOS™3 Power-Transistor IPI030N10N3 G Product Summary Features VDS • N-channel, normal level 100 RDS(on),max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mW 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G Package PG-TO220-3 PG-TO262-3 Marking 030N10N 030N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 100 T C=100 °C 100 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 W 1000 mJ Gate source voltage V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.1 page 1 2011-07-18 IPP030N10N3 G Parameter IPI030N10N3 G Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area3) - - 40 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, R thJA junction - ambient K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=275 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 2.6 3 mW V GS=6 V, I D=50 A - 3.1 4.8 - 1.9 - W 94 188 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2011-07-18 IPP030N10N3 G Parameter IPI030N10N3 G Values Symbol Conditions Unit min. typ. max. - 11100 14800 pF - 1940 2580 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 69 - Turn-on delay time t d(on) - 34 - Rise time tr - 58 - Turn-off delay time t d(off) - 84 - Fall time tf - 28 - Gate to source charge Q gs - 49 - Gate to drain charge Q gd - 28 - Switching charge Q sw - 43 - Gate charge total Qg - 155 206 Gate plateau voltage V plateau - 4.4 - Output charge Q oss - 205 273 nC - - 100 A - - 400 - 1 1.2 V - 86 - ns - 232 - nC V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=100 A, R G=1.6 W ns Gate Charge Characteristics4) V DD=50 V, I D=100 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=50 V, I F=I S , di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2011-07-18 IPP030N10N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 350 IPI030N10N3 G 120 300 100 250 200 ID [A] Ptot [W] 80 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 limited by on-state resistance 1 µs 10 µs 100 µs 102 0.5 ZthJC [K/W] ID [A] 1 ms 10 ms 101 DC 0.2 10-1 0.1 0.05 100 0.02 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Rev. 2.1 10-5 page 4 2011-07-18 IPP030N10N3 G IPI030N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 300 6 10 V 6V 250 5 7.5 V 4.5 V 5.5 V 5V 4 RDS(on) [mW] ID [A] 200 150 4.5 V 100 5V 6V 3 10 V 2 50 1 0 0 0 7.5 V 1 2 0 40 VDS [V] 80 120 160 120 160 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 300 240 250 200 200 160 gfs [S] ID [A] parameter: T j 150 100 120 80 25 °C 50 40 175 °C 0 0 0 2 4 6 VGS [V] Rev. 2.1 0 40 80 ID [A] page 5 2011-07-18 IPP030N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPI030N10N3 G parameter: I D 7 4 6 3.5 3 2750 µA 2.5 4 VGS(th) [V] RDS(on) [mW] 5 98 % typ 3 275 µA 2 1.5 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 103 Ciss 175 °C, 98% 104 25 °C 102 IF [A] C [pF] Coss 103 175 °C 25 °C, 98% 101 Crss 102 101 100 0 20 40 60 80 VDS [V] Rev. 2.1 0 0.5 1 1.5 2 VSD [V] page 6 2011-07-18 IPP030N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 1000 IPI030N10N3 G 10 8 80 V 100 50 V 6 VGS [V] IAS [A] 25 °C 100 °C 150 °C 20 V 4 10 2 1 0 1 10 100 1000 0 40 tAV [µs] 80 120 160 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg VBR(DSS) [V] 105 100 V g s(th) 95 Q g (th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.1 page 7 2011-07-18 IPP030N10N3 G IPI030N10N3 G PG-TO220-3: Outline Rev. 2.1 page 8 2011-07-18 IPP030N10N3 G IPI030N10N3 G PG-TO262-3 Rev. 2.1 page 9 2011-07-18 IPP030N10N3 G IPI030N10N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2011-07-18