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IPP04CN10NGXKSA1

IPP04CN10NGXKSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TO220-3

  • 描述:

    MV POWER MOS

  • 数据手册
  • 价格&库存
IPP04CN10NGXKSA1 数据手册
IPB04CN10N G IPI04CN10N G IPP04CN10N G ™ "%&$!"# 2 Power-Transistor Product Summary Features V ;I R ( 492 ??6= ?@ C>2 ==6G6= R  - @ ?>2 I.) R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )(( K +&1 Z" )(( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E FC6 R * 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E R + F2 =:7:65 2 44@ C5:?8 E@ %   )# 7@ CE2 C86E2 AA=:42 E:@ ? R$562 =7@ C9:89 7C6BF6?4J DH:E49:?8 2 ?5 DJ?49C@ ?@ FD C64E :7:42 E :@ ? R# 2 =@ 86? 7C66 2 44@ C5:?8 E@ $        Type $*    ( ( " $* $   ( ( " $* *   ( ( " Package F>%JE*.+%+ F>%JE*.*%+ F>%JE**(%+ Marking (,9D)(D (,9D)(D (,9D)(D Maximum ratings, 2 ET W   U  F?=6DD @ E96CH:D6 DA64:7:65 Parameter Symbol Conditions  @ ?E :?F@ FD 5C 2 :? 4FCC6?E I; T 9   U *# Value )(( T 9 U )(( Unit 7 * F=D65 5C2 :? 4FCC6?E+# I ;$]bY`R T 9   U ,((  G2 =2 ?496 6?6C8J D:?8=6 AF=D6 E 7I I ;   R >I   " )((( ZA " 2 E6 D@ FC46 G@ =E2 86 ,# V >I r*( K * @ H6C5:DD:A2 E:@ ? P a\a +(( L ) A6C2 E:?8 2 ?5 DE@ C 2 86 E6>A6C2 EFC6 T W T `aT     U T 9   U $  4=:>2 E :4 42 E68@ CJ  $( $    , 6G        A2 86   IPB04CN10N G IPI04CN10N G IPP04CN10N G Parameter Values Symbol Conditions Unit min. typ. max. % % (&- >:?:>2 =7@ @ EAC:?E   4> * 4@ @ =:?8 2 C62 -# % % ,( )(( % % Thermal characteristics .96C>2 =C6D:DE2 ?46 ; F?4E:@ ? 42 D6 R aUA9 .96C>2 =C6D:DE2 ?46 R aUA7 ;F?4E :@ ? 2 >3 :6?E B'L Electrical characteristics, 2 ET W   U  F?=6DD @ E96CH:D6 DA64:7:65 Static characteristics  C2 :? D@ FC46 3 C62 I"aU# V ;I5V >I I ;   W  * + , 16C@ 82 E6 G@ =E2 86 5C 2 :? 4FCC6?E I ;II V ;I  /  V >I /  T W   U % (&) ) V ;I  /  V >I /  T W   U % )( )(( K s7 " 2 E6 D@ FC46 =62 II V >I  /  V ;I / % ) )(( [7  C2 :? D@ FC46 @ ? DE2 E6 C6D:DE2 ?46 R ;I"\[# V >I /  I ;  % +&- ,&* Z" V >I /  I ;   JE*.+ % +&* +&1 % )&+ % " 0+ ).- % I " 2 E6 C6D:DE 2 ?46 R> J_N[`P\[QbPaN[PR g S` )# hV ;Ih6*hI ;hR ;I"\[#ZNe I ;  % - .  2 ?5 % -    *#  FC C 6?E:D =:>:E65 3 J 3 @ ?5H:C 6 H:E9 2 ?R aUA9  & 0 E 96 49:A :D 2 3 =6 E@ 42 C C J    +# - 66 7:8FC 6 ,# . WZNe  U 2 ?5 5FEJ 4J4=6   7@ C/T`4%-K -#  6G:46 @ ?  >> I  >> I  >> 6A@ IJ *   !,  H:E9  4>* @ ?6 =2 J6C  W>E 9:4I /  V ;I  /  f ' # K ) FEAFE42 A2 4:E2 ?46 C \`` , 6G6CD6 EC2 ?D76C42 A2 4:E2 ?46 C _`` % 0. )*1 .FC? @ ? 56=2 J E:>6 t Q"\[# % +, -) , :D6 E:>6 t_ % /0 ))/ .FC? @ 7756=2 J E:>6 t Q"\SS# % /. )), !2 ==E:>6 tS % *- +0 " 2 E6 E@ D@ FC46 492 C86 Q T` % -* /( " 2 E6 E@ 5C2 :? 492 C86 Q TQ % +/ -- % -0 0+ V ;;  /  V >I /  I ;    R >  " [` " 2 E6  92 CT6  92 C2 4E6C:DE :4D.# V ;;  /  I ;   V >I E@ / [9 - H:E49:?8 492 C86 Q `d " 2 E6 492 C86 E@ E 2= QT % )-0 *)( " 2 E6 A=2 E62 F G@ =E 2 86 V ]YNaRNb % -&( % ) FEAFE492 C86 Q \`` % ).0 **+ [9 % % )(( 7 % % ,(( % )&( )&* K % )(( % [` % +(( % [9 V ;;  /  V >I / K Reverse Diode  :@ 56 4@ ?E:?@ FD 7@ CH2 C5 4FCC 6?E II  :@ 56 AF=D6 4FCC 6?E I I$]bY`R  :@ 56 7@ CH2 C5 G@ =E2 86 V I; , 6G6CD6 C64@ G6CJ E:>6 t __ , 6G6CD6 C64@ G6CJ 492 C 86 Q __ .# , 6G  T 9   U V >I /  I =   T W   U V H  /  I =5I I Qi ='Qt   W D - 66 7:8FC 6  7@ C82 E6 492 C 86 A2 C2 >6E6C567:?:E :@ ? A2 86    IPB04CN10N G IPI04CN10N G IPP04CN10N G 1 Power dissipation 2 Drain current P a\a5S"T 9# I ;5S"T 9 V >I" / 350 120 300 100 250 200 I D [A] P tot [W] 80 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I ;5S"V ;I T 9   U  D 5( Z aUA95S"t ]# A2 C2 >6E6C t ] A2 C2 >6E6C  D 5t ]'T 103 100 =:>:E 65 3 J @ ? DE2 E 6 _R`V`aN[PR WD WD (&- WD >D >D 102 10-1 (&) I D [A] Z thJC [K/W] ;9 (&* (&((&(* (&() 101 10-2 100 10 10-3 -1 10 0 10 1 10 2 10 3 V DS [V] , 6G  D:?8=6 AF=D6 10-5 10-4 10-3 10-2 10-1 100 t p [s] A2 86    IPB04CN10N G IPI04CN10N G IPP04CN10N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I ;5S"V ;I T W   U R ;I"\[#5S"I ; T W   U A2 C 2 >6E6C V >I A2 C2 >6E6C  V >I 400 15 /  /  / 320 12   /  /  / R DS(on) [m ]   / I D [A] 240   / 160 9 6   /  / / 80 3  /   / 0 0 0 1 2 3 4 5 0 50 V DS [V] 100 150 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I ;5S"V >I L V ;Ih6*hI ;hR ;I"\[#ZNe g S`5S"I ; T W   U A2 C 2 >6E6C T W 300 200 250 160 200 g fs [S] I D [A] 120 150 80 100   U   U 40 50 0 0 0 2 4 6 8 V GS [V] , 6G  0 50 I D [A] A2 86    IPB04CN10N G IPI04CN10N G IPP04CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R ;I"\[#5S"T W I ;   V >I / V >I"aU#5S"T W V >I5V ;I A2 C2 >6E6C  I; 10 4 3.5 8  W   W  2.5 6 V GS(th) [V] R DS(on) [m ] 3   af] 4 2 1.5 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 5S"V ;I V >I /  f  ' # K I =5S"V I;# A2 C2 >6E6C  TW 105 103 104 10 9\``   U 2   U     10 I F [A] C [pF]   U       U 9V`` 3 9_`` 101 102 101 100 0 20 40 60 80 V DS [V] , 6G  0 0.5 1 1.5 2 V SD [V] A2 86    IPB04CN10N G IPI04CN10N G IPP04CN10N G 13 Avalanche characteristics 14 Typ. gate charge I 7I5S"t 7K R >I   " V >I5S"Q TNaR I ;  AF=D65 A2 C 2 >6E6C T W"`aN_a# A2 C2 >6E6C  V ;; 1000 12 10  / 100 8   U V GS [V] U I AS [A]  /  /  U 10 6 4 2 1 0 1 10 100 1000 0 50 t AV [µs] 100 150 200 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 8H";II#5S"T W I ; > 115 V >I Qg V BR(DSS) [V] 110 105 V T `"aU# 100 95 Q T "aU# Q `d Q T` 90 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] , 6G  A2 86    IPB04CN10N G IPI04CN10N G IPP04CN10N G PG-TO220-3: Outline , 6G  A2 86    IPB04CN10N G IPI04CN10N G IPP04CN10N G , 6G  A2 86    IPB04CN10N G IPI04CN10N G IPP04CN10N G PG-TO-263 (D²-Pak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ddd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