IPP052N08N5

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPP052N08N5 DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V IPP052N08N5 1Description TO-220-3 tab Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 5.2 mΩ ID 80 A Qoss 51 nC QG(0V..10V) 42 nC Type/OrderingCode Package IPP052N08N5 PG-TO220-3 1) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 052N08N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 80 78 A TC=25°C TC=100°C - 320 A TC=25°C - - 84 mJ ID=80A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 125 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.9 1.2 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area3) - - 40 K/W - Soldering temperature, wave and reflow soldering are allowed - - 260 °C reflow MSL1 Tsold 1) See figure 3 for more detailed information See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=66µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.6 6.0 5.2 6.9 mΩ VGS=10V,ID=80A VGS=6V,ID=40A Gate resistance1) RG - 1.1 1.7 Ω - Transconductance gfs 52 104 - S |VDS|>2|ID|RDS(on)max,ID=80A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 2900 3770 pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 490 637 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 23 40 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 17 - ns VDD=40V,VGS=10V,ID=80A, RG,ext=1.6Ω Rise time tr - 7 - ns VDD=40V,VGS=10V,ID=80A, RG,ext=1.6Ω Turn-off delay time td(off) - 27 - ns VDD=40V,VGS=10V,ID=80A, RG,ext=1.6Ω Fall time tf - 7 - ns VDD=40V,VGS=10V,ID=80A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 15 - nC VDD=40V,ID=80A,VGS=0to10V Gate to drain charge Qgd - 9.4 14 nC VDD=40V,ID=80A,VGS=0to10V Switching charge Qsw - 16 - nC VDD=40V,ID=80A,VGS=0to10V Gate charge total Qg - 42 53 nC VDD=40V,ID=80A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=40V,ID=80A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 36 - nC VDS=0.1V,VGS=0to10V Qoss - 51 68 nC VDD=40V,VGS=0V Gate to source charge 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 80 A TC=25°C - 320 A TC=25°C - 1.0 1.2 V VGS=0V,IF=80A,Tj=25°C trr - 56 112 ns VR=40V,IF=80A,diF/dt=100A/µs Qrr - 92 184 nC VR=40V,IF=80A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 6 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 150 100 80 100 ID[A] Ptot[W] 60 40 50 20 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 2 10 100 0.5 ZthJC[K/W] ID[A] 100 µs 101 1 ms 0.2 0.1 10-1 100 0.05 0.02 0.01 10 ms single pulse DC 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 320 10 5V 280 5.5 V 6V 9 7V 10 V 8 240 7V 7 RDS(on)[mΩ] 200 ID[A] 6V 160 120 5.5 V 6 5 10 V 4 3 80 2 5V 40 0 1 0 1 2 3 4 0 5 0 50 100 VDS[V] 150 200 250 300 350 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 250 150 200 100 ID[A] gfs[S] 150 100 50 50 175 °C 0 0 2 25 °C 4 6 8 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 11 4.0 10 3.5 9 7 66 µA 2.5 max 6 VGS(th)[V] RDS(on)[mΩ] 660 µA 3.0 8 typ 5 2.0 1.5 4 3 1.0 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 60 Tj[°C] 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=80A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25 °C, max 175 °C, max Ciss Coss 102 IF[A] C[pF] 103 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] 1.5 2.0 2.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 103 10 8 40 V 102 20 V 60 V 20 30 VGS[V] IAV[A] 6 25 °C 4 100 °C 1 10 2 150 °C 100 100 101 102 103 0 0 10 tAV[µs] 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=80Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 90 VBR(DSS)[V] 85 80 75 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 6PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2014-12-17 OptiMOSª5Power-Transistor,80V IPP052N08N5 RevisionHistory IPP052N08N5 Revision:2014-12-17,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-17 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-12-17