IPP054NE8NGHKSA2

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A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G 1 Power dissipation 2 Drain current P a\a5S"T 9# I ;5S"T 9 V >I"  / 350 120 300 100 250 200 I D [A] P tot [W] 80 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I ;5S"V ;I T 9   U  D 5( Z aUA95S"t ]# A2 C2 >6E6C t ] A2 C2 >6E6C  D 5t ]'T 1000 100 WD  WD (&  WD >D 10-1 I D [A]  >D ;9 (&() 10-2 1 10-3 1 10 100 10-5 D:?8=6 AF=D6 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] , 6G  (&((&(* 10 0.1 (&* (&) Z thJC [K/W] 100 A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I ;5S"V ;I T W   U R ;I"\[#5S"I ; T W   U A2 C 2 >6E6C V >I A2 C2 >6E6C  V >I 400 15  /  /  /   / 320 12 240 R DS(on) [m ]   / I D [A]  / 160 9  /   / 6   /  /  / 80 3  /   / 0 0 0 1 2 3 4 5 0 50 V DS [V] 100 150 100 150 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I ;5S"V >I L V ;Ih6*hI ;hR ;I"\[#ZNe g S`5S"I ; T W   U A2 C 2 >6E6C T W 300 200 250 160 200 g fs [S] I D [A] 120 150 80 100   U   U 40 50 0 0 0 2 4 6 8 , 6G  0 50 I D [A] V GS [V] A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R ;I"\[#5S"T W I ;     V >I  / V >I"aU#5S"T W V >I5V ;I A2 C2 >6E6C  I; 12 4 3.5 10  W  3  W  2.5 V GS(th) [V] R DS(on) [m ] 8   6 af] 2 1.5 4 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C 5S"V ;I V >I  /  f  ' # K I =5S"V I;# A2 C2 >6E6C  TW 105 103 104 10 103   U     2 I F [A] 9\`` C [pF]   U   U 9V``   U     9_`` 101 102 101 100 0 20 40 60 80 V DS [V] , 6G  0 0.5 1 1.5 2 V SD [V] A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G 13 Avalanche characteristics 14 Typ. gate charge I 7I5S"t 7K R >I   " V >I5S"Q TNaR I ;    AF=D65 A2 C 2 >6E6C T W"`aN_a# A2 C2 >6E6C  V ;; 1000 12  / 10  / 100  /   U   U   U V GS [V] I AS [A] 8 10 6 4 2 1 0 1 10 100 1000 0 50 100 150 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V 8H";II#5S"T W I ; > 100 V >I Qg V BR(DSS) [V] 95 90 V T `"aU# 85 80 Q T "aU# Q `d Q T` 75 -60 -20 20 60 100 140 Q g ate Q TQ 180 T j [°C] , 6G  A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G PG-TO220-3: Outline , 6G  A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G , 6G  A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G PG-TO-263 (D²-Pak) , 6G  A2 86       IPB051NE8N G IPI05CNE8N G IPP054NE8N G )& *.'/2- " 4 */. 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