IPP080N03L G
Type
IPB080N03L G
™
!"#$%!& 3 Power-Transistor
Product Summary
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
V DS
30
V
R DS(on),max
8.0
mW
ID
50
A
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP080N03L G
IPB080N03L G
Package
PG-TO220-3-1
PG-TO263-3
Marking
080N03L
080N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
50
V GS=10 V, T C=100 °C
42
V GS=4.5 V, T C=25 °C
48
V GS=4.5 V,
T C=100 °C
34
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
350
Avalanche current, single pulse3)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=12 A, R GS=25 W
50
mJ
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage
V GS
1)
±20
V
J-STD20 and JESD22
Rev. 1.04
page 1
2010-01-19
IPP080N03L G
IPB080N03L G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Value
T C=25 °C
IEC climatic category; DIN IEC 68-1
Parameter
Unit
47
W
-55 ... 175
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
3.2
minimal footprint
-
-
62
6 cm² cooling area4)
-
-
40
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance5)
R DS(on)
V GS=4.5 V, I D=30 A
-
9.5
11.9
mW
V GS=10 V, I D=30 A
-
6.7
8
-
1.3
-
W
30
59
-
S
Gate resistance
RG
Transconductance
g fs
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
|V DS|>2|I D|R DS(on)max,
I D=30 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5)
Measured from drain tab to source pin
Rev. 1.04
page 2
2010-01-19
IPP080N03L G
IPB080N03L G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1400
1900
-
580
770
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
29
-
Turn-on delay time
t d(on)
-
4.6
-
Rise time
tr
-
3.6
-
Turn-off delay time
t d(off)
-
18
-
Fall time
tf
-
2.8
-
Gate to source charge
Q gs
-
4.6
-
Gate charge at threshold
Q g(th)
-
2.2
-
Gate to drain charge
Q gd
-
2.1
-
Switching charge
Q sw
-
4.5
-
Gate charge total
Qg
-
8.7
-
Gate plateau voltage
V plateau
-
3.3
-
Gate charge total
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
18
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
7.6
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
15
-
-
-
43
-
-
350
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 W
pF
ns
Gate Charge Characteristics5)
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
A
T C=25 °C
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=30 A,
T j=25 °C
-
0.91
1.1
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
6)
See figure 16 for gate charge parameter definition
Rev. 1.04
page 3
2010-01-19
IPP080N03L G
IPB080N03L G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS!10 V
50
60
50
40
40
I D [A]
P tot [W]
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
102
0.5
10 µs
1
100 µs
Z thJC [K/W]
0.2
I D [A]
DC
10
1
1 ms
10 ms
10
0.05
0.02
0.1
0.01
0
single pulse
10-1
10-1
0.01
100
101
102
0
10
0
-6
10
0
-5
10
0
-4
10
0
-3
10
0
-2
10
1
-1
10
0
t p [s]
V DS [V]
Rev. 1.04
0.1
page 4
2010-01-19
IPP080N03L G
IPB080N03L G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
160
24
10 V
5V
20
4.5 V
3.2 V
120
3.5 V
4V
R DS(on) [mW ]
I D [A]
16
4V
80
12
4.5 V
8
40
5V
10 V
11.5 V
3.5 V
4
3.2 V
3V
2.8 V
0
0
0
1
2
3
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
120
100
80
80
I D [A]
g fs [S]
60
40
40
20
175 °C
25 °C
0
0
0
1
2
3
4
5
Rev. 1.04
0
20
40
60
I D [A]
V GS [V]
page 5
2010-01-19
IPP080N03L G
IPB080N03L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
14
2.5
12
2
10
R DS(on) [mW ]
98 %
1.5
V GS(th) [V]
8
typ
6
1
4
0.5
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
10000
25 °C
25 °C, 98%
103
Ciss
1000
100
175 °C, 98%
I F [A]
C [pF]
Coss
175 °C
102
10
100
Crss
101
1
10
0
5
10
15
20
25
30
Rev. 1.04
0.0
0.5
1.0
1.5
2.0
V SD [V]
V DS [V]
page 6
2010-01-19
IPP080N03L G
IPB080N03L G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
6V
24 V
10
25 °C
8
V GS [V]
I AV [A]
100 °C
10
150 °C
6
4
2
1
0
10-1
100
101
102
103
0
5
t AV [µs]
10
15
20
25
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
34
V GS
Qg
32
V BR(DSS) [V]
30
28
26
V g s(th)
24
Q g (th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.04
page 7
2010-01-19
IPP080N03L G
IPB080N03L G
Package Outline
Footprint:
Rev. 1.04
PG-TO220-3-1
….
Packaging:
page 8
2010-01-19
IPP080N03L G
IPB080N03L G
Package Outline
Rev. 1.04
PG-TO263-3
….
page 9
2010-01-19
IPP080N03L G
IPB080N03L G
….
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Rev. 1.04
page 10
2010-01-19