IPP083N10N5AKSA1

IPP083N10N5 MOSFET OptiMOSª5Power-Transistor,100V TO-220-3 tab Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 8.3 mΩ ID 73 A Qoss 40 nC QG(0V..10V) 30 nC Type/OrderingCode Package IPP083N10N5 PG-TO220-3 1) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 083N10N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 73 53 A TC=25°C TC=100°C - 292 A TC=25°C - - 50 mJ ID=73A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 100 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 1.1 1.5 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 40 K/W - Soldering temperature, wave and reflow soldering are allowed - - 260 °C - Tsold 1) see Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=49µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 7.3 8.9 8.3 11.0 mΩ VGS=10V,ID=73A VGS=6V,ID=37A Gate resistance1) RG - 1.2 1.8 Ω - Transconductance gfs 48 96 - S |VDS|>2|ID|RDS(on)max,ID=73A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 2100 2730 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 337 438 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 16 28 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=50V,VGS=10V,ID=73A, RG,ext=1.6Ω Rise time tr - 5 - ns VDD=50V,VGS=10V,ID=73A, RG,ext=1.6Ω Turn-off delay time td(off) - 21 - ns VDD=50V,VGS=10V,ID=73A, RG,ext=1.6Ω Fall time tf - 5 - ns VDD=50V,VGS=10V,ID=73A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 11 - nC VDD=50V,ID=73A,VGS=0to10V Gate to drain charge Qgd - 6.5 10 nC VDD=50V,ID=73A,VGS=0to10V Switching charge Qsw - 11 - nC VDD=50V,ID=73A,VGS=0to10V Gate charge total Qg - 30 37 nC VDD=50V,ID=73A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=50V,ID=73A,VGS=0to10V Output charge1) Qoss - 40 53 nC VDD=50V,VGS=0V Gate to source charge 1) 1) 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 73 A TC=25°C - 292 A TC=25°C - 1.0 1.2 V VGS=0V,IF=73A,Tj=25°C trr - 58 116 ns VR=50V,IF=IS,diF/dt=100A/µs Qrr - 118 236 nC VR=50V,IF=IS,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 120 80 70 60 80 ID[A] Ptot[W] 50 40 30 40 20 10 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 100 µs ZthJC[K/W] ID[A] 0.5 1 ms 101 10 ms 0.2 0.1 0.05 10 -1 0.02 0.01 100 10-1 10-1 DC 100 101 single pulse 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 300 20 5V 10 V 8V 6V 4.5 V 16 RDS(on)[mΩ] 200 ID[A] 6V 12 8V 8 10 V 100 4 5V 4.5 V 0 0 1 2 3 4 0 5 0 50 100 VDS[V] 150 200 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 300 120 250 100 200 80 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 150 40 50 20 0 0 2 100 120 25 °C 4 6 8 10 0 0 20 VGS[V] 40 60 80 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 300 60 100 175 °C 250 ID[A] gfs=f(ID);Tj=25°C 7 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 18 4.0 16 3.5 14 490 µA 3.0 12 49 µA max 10 VGS(th)[V] RDS(on)[mΩ] 2.5 typ 8 2.0 1.5 6 1.0 4 0.5 2 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=73A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25 °C, max 175 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 50 V 25 °C VGS[V] IAS[A] 80 V 20 V 6 100 °C 101 4 150 °C 2 100 100 101 102 103 0 0 tAV[µs] 10 20 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=73Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 5PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2016-10-03 OptiMOSª5Power-Transistor,100V IPP083N10N5 RevisionHistory IPP083N10N5 Revision:2016-10-03,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-17 Release of final version 2.1 2016-10-03 Update Avalanche Energy TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2016-10-03