IPP200N25N3GXKSA1

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 250 V RDS(on),max 20 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 200N25N 200N25N 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 64 T C=100 °C 50 Unit A Pulsed drain current2) I D,pulse T C=25 °C 256 Avalanche energy, single pulse E AS I D=47 A, R GS=25 W 320 mJ Reverse diode dv /dt dv /dt 10 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.5 page 1 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area3) - - 40 250 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=200 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=200 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=64 A - 17.5 20 mW Gate resistance RG - 2.4 - W Transconductance g fs 61 122 - S |V DS|>2|I D|R DS(on)max, I D=64 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.5 page 2 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Values Symbol Conditions Unit min. typ. max. - 5340 7100 - 297 395 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 4 - Turn-on delay time t d(on) - 18 - Rise time tr - 20 - Turn-off delay time t d(off) - 45 - Fall time tf - 12 - Gate to source charge Q gs - 22 - Gate to drain charge Q gd - 7 - Switching charge Q sw - 13 - Gate charge total Qg - 64 86 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 135 179 nC - - 64 A - - 256 - 1 1.2 V - 170 - ns - 780 - nC V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=25 A, R G,ext=1.6 W pF ns Gate Charge Characteristics4) V DD=100 V, I D=25 A, V GS=0 to 10 V V DD=100 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=64 A, T j=25 °C V R=100 V, I F=25 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.5 page 3 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 320 70 280 60 240 50 ID [A] Ptot [W] 200 160 40 30 120 20 80 10 40 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 100 1 µs 10 µs 102 100 µs ZthJC [K/W] 0.5 ID [A] 1 ms 101 10 ms 10-1 0.2 0.1 DC 0.05 100 0.02 0.01 single pulse 10-1 10-2 10-1 100 101 102 103 VDS [V] Rev. 2.5 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 150 30 10 V 7V 125 25 4.5 V 5V 5V 20 RDS(on) [mW] ID [A] 100 75 4.5 V 50 7V 10 V 15 10 25 5 0 0 0 1 2 3 4 5 0 20 40 60 VDS [V] 80 100 120 140 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 140 180 160 120 140 100 80 100 gfs [S] ID [A] 120 60 80 60 40 40 175 °C 20 20 25 °C 0 0 0 2 4 6 8 VGS [V] Rev. 2.5 0 25 50 75 100 125 ID [A] page 5 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=64 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 70 4 3.5 60 2700 µA 3 50 VGS(th) [V] RDS(on) [mW] 270 µA 2.5 40 30 2 98% 1.5 typ 20 1 10 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 175 °C IF [A] C [pF] 102 102 25°C, 98% 175°C, 98% 101 Crss 25 °C 101 100 0 40 80 120 160 VDS [V] Rev. 2.5 0 0.5 1 1.5 2 VSD [V] page 6 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=25 A pulsed parameter: T j(start) parameter: V DD 100 10 8 25 °C 200 V 6 10 125 V VGS [V] IAS [A] 100 °C 125 °C 50 V 4 2 1 0 1 10 100 1000 0 20 tAV [µs] 40 60 80 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 290 V GS Qg 280 VBR(DSS) [V] 270 260 V gs(th) 250 240 Q g(th) 230 Q sw Q gs Q gate Q gd 220 -60 -20 20 60 100 140 180 Tj [°C] Rev. 2.5 page 7 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO220-3: Outline Rev. 2.5 page 8 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO263-3: Outline Rev. 2.5 page 9 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO262-3: Outline Rev. 2.5 page 10 2017-03-31 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 page 11 2017-03-31