IPP35CN10NGXKSA1

OptiMOS™2 Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) VDS 100 V RDS(on),max (TO252) 33 mW ID 27 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 34CN10N 33CN10N 35CN10N 35CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 27 T C=100 °C 20 Unit A Pulsed drain current2) I D,pulse T C=25 °C 108 Avalanche energy, single pulse E AS I D=27 A, R GS=25 W 47 mJ Gate source voltage3) V GS ±20 V Power dissipation P tot 58 W Operating and storage temperature T j, T stg -55 ... 175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 55/175/56 J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max, I D=27 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.091 page 2 2013-07-25 Parameter IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Values Symbol Conditions Unit min. typ. max. - 1180 1570 - 175 233 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 13 20 Turn-on delay time t d(on) - 11 17 Rise time tr - 21 31 Turn-off delay time t d(off) - 17 25 Fall time tf - 4 6 Gate to source charge Q gs - 7 9 Gate to drain charge Q gd - 4 6 Switching charge Q sw - 7 11 Gate charge total Qg - 18 24 Gate plateau voltage V plateau - 5.6 - Output charge Q oss - 18 24 nC - - 27 A - - 108 - 1 1.2 - 77 - 154 V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=27 A, R G,ext=1.6 W pF ns Gate Charge Characteristics5) V DD=50 V, I D=27 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=27 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition Rev. 1.091 page 3 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 30 40 20 ID [A] Ptot [W] 60 20 10 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 102 1 µs 0.5 100 ID [A] 100 µs 101 0.2 ZthJC [K/W] 10 µs 1 ms DC 10 ms 0.1 0.05 0.02 10-1 0.01 single pulse 100 10-1 10-2 10-1 100 101 102 103 VDS [V] Rev. 1.091 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 150 80 5V 4.5 V 10 V 5.5 V 8V 60 RDS(on) [mW] ID [A] 100 7V 40 6V 8V 6.5 V 50 10 V 20 6V 5.5 V 5V 4.5 V 0 0 1 0 2 3 4 5 0 20 VDS [V] ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 40 40 30 30 gfs [S] 50 ID [A] 50 175 °C 20 20 25 °C 10 10 0 0 0 2 4 6 8 VGS [V] Rev. 1.091 0 10 20 30 40 50 ID [A] page 5 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=27 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 80 4 3.5 60 290 µA 3 VGS(th) [V] RDS(on) [mW] 29 µA 2.5 98 % 40 typ 2 1.5 20 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 102 25 °C 175 °C 175 °C, 98% IF [A] C [pF] Coss 102 Crss 25 °C, 98% 101 101 100 100 0 20 40 60 80 0.5 1 1.5 2 VSD [V] VDS [V] Rev. 1.091 0 page 6 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=27 A pulsed parameter: T j(start) parameter: V DD 100 12 50 V 10 20 V 80 V 25 °C VGS [V] IAS [A] 8 10 100 °C 6 150 °C 4 2 1 0 1 10 100 1000 0 5 tAV [µs] 10 15 20 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 115 V GS Qg VBR(DSS) [V] 110 105 V gs(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 1.091 page 7 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G PG-TO220-3: Outline Rev. 1.091 page 8 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G PG-TO262-3-1 (I²PAK) Rev. 1.091 page 9 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G PG-TO-263 (D²-Pak) Rev. 1.091 page 10 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G PG-TO252-3: Outline Rev. 1.091 page 11 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.091 page 12 2013-07-25