IPP47N10S33AKSA1

IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 V RDS(on) 33 m
ID 47 A P-TO263-3-2 P-TO220-3-1 • Green package (lead free) Type Package Ordering Code Marking IPP47N10S-33 PG-TO220-3-1 SP0002-25706 N1033 IPB47N10S-33 PG-TO263-3-2 SP0002-25702 N1033 IPI47N10S-33 PG-TO262-3-1 SP0002-25703 N1033 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 47 TC=100°C 33 ID puls 188 EAS 400 Avalanche energy, periodic limited by Tjmax EAR 17.5 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 175 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25
mJ kV/µs IS =47A, VDS =0V, di/dt=200A/µs TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.85 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =2mA Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.1 1 VDS =100V, VGS =0V, Tj =150°C - - 100 IGSS - 10 100 nA RDS(on) - 25 33 m
Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID =33A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 13 26 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =33A Input capacitance Ciss VGS =0V, VDS =25V, - 2000 2500 Output capacitance Coss f=1MHz - 370 465 Reverse transfer capacitance Crss - 190 240 Turn-on delay time td(on) - 25 39 Rise time tr - 23 36 Turn-off delay time td(off) - 63 99 Fall time tf - 15 22.5 - 19 28.5 - 29 43.5 - 70 105 V(plateau) VDD =80V, ID=47A - 6.03 - V IS - - 47 A - - 188 VDD =50V, VGS=10V, ID =47A, RG =4.7
ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =47A VDD =80V, ID =47A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =94A - 1.1 1.5 V Reverse recovery time trr VR =50V, IF =lS , - 100 150 ns Reverse recovery charge Qrr diF /dt=100A/µs - 400 600 nC Page 3 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 190 parameter: VGS  10 V SPP47N10 55 W A 160 45 140 40 120 35 ID Ptot SPP47N10 30 100 25 80 20 60 15 40 10 20 0 0 5 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 3 SPP47N10 SPP47N10 K/W A 10 0 tp = 7.1µs Z thJC 10 µs 10 -1 DS /I D ID 10 2 =V DS (on ) 10 -2 0.20 0.10 R 10 1 D = 0.50 100 µs 0.05 1 ms 0.02 10 -3 0.01 10 ms single pulse DC 10 0 -1 10 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS A SPP47N10 100 Ptot = 175W 100 k j i 90 b 4.5 h c 5.0 d 5.5 e 6.0 f 6.5 g 7.5 ID 80 g 70 f 60 50 e 40 d 30 h 8.0 i 9.0 j 9.0 k 10.0 l 20.0 vgs[V] 60 5V 5.5V 6V 6.5V 7V 7.5V 50 8V 80 70 40 9V 30 20 10V 20V c 20 10 0 0 m
VGS [V] a 4.0 l RDS(on) 120 b a 1 2 3 4 5 V 6 10 0 8 20 40 60 110 A ID 80 VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 35 60 A S 50 45 25 g fs ID 40 35 20 30 15 25 20 10 15 10 5 5 0 0 1 2 3 4 5 6 7 8 V 10 0 0 10 20 30 40 A 60 ID VGS Page 5 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 33 A, VGS = 10 V parameter: VGS = VDS , ID = 2 mA 130 SPP47N10 5 V 110 4.4 100 4 V GS(th) RDS(on) m
90 80 3.6 3.2 70 2.8 60 2.4 2 50 98% 40 30 1.2 typ 0.8 10 0.4 -20 20 typ 1.6 20 0 -60 max 60 100 140 °C min 0 -60 200 -20 20 60 100 140 Tj V 200 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 SPP47N10 A pF 10 2 C IF Ciss 10 3 10 1 Tj = 25 °C typ Coss Tj = 175 °C typ Tj = 25 °C (98%) Crss 10 2 0 5 10 15 20 25 30 V Tj = 175 °C (98%) 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 47 A , VDD = 25 V, RGS = 25
parameter: ID = 47 A pulsed 650 mJ 16 SPP47N10 V 550 12 450 VGS EAS 500 400 0,2 VDS max 10 0,8 VDS max 350 8 300 250 6 200 4 150 100 2 50 0 20 40 60 80 100 120 140 °C 180 Tj 0 0 20 40 60 80 nC 110 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP47N10 V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2006-02-14 IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2006-02-14