IPP50R190CE

IPW50R190CE,IPP50R190CE MOSFET 500VCoolMOSªCEPowerTransistor PG-TO247 PG-TO220 tab CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. Drain Pin 2 Gate Pin 1 Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,LCD&PDPTVandLighting. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.19 Ω ID 24.8 A Qg.typ 47.2 nC ID,pulse 63 A Eoss@400V 4.42 µJ Type/OrderingCode Package IPW50R190CE PG-TO 247 IPP50R190CE PG-TO 220 Final Data Sheet Marking 5R190CE 1 RelatedLinks see Appendix A Rev.2.2,2016-06-13 500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.2,2016-06-13 500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 24.8 15.7 A TC = 25°C TC = 100°C - 63 A TC=25°C - - 339 mJ ID =7.7A; VDD = 50V EAR - - 0.51 mJ ID =7.7A; VDD = 50V Avalanche current, repetitive IAR - - 7.7 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation (non FullPAK) TO-247, TO-220 Ptot - - 152 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - - - 60 Ncm M3 and M3.5 screws IS - - 17.6 A TC=25°C Diode pulse current IS,pulse - - 63.0 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD