IPP50R380CE
MOSFET
500VCoolMOSªCEPowerTransistor
PG-TO220
tab
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.38
Ω
ID
14.1
A
Qg,typ
24.8
nC
ID,pulse
32.4
A
Eoss @ 400V
2.54
µJ
Type/OrderingCode
Package
Marking
IPP50R380CE
PG-TO 220
5R380CE
Final Data Sheet
1
RelatedLinks
see Appendix A
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
14.1
8.9
A
TC = 25°C
TC = 100°C
-
32.4
A
TC=25°C
-
-
173
mJ
ID =4A; VDD = 50V
EAR
-
-
0.26
mJ
ID =4A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
4.0
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
TO-220
Ptot
-
-
98
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
-
-
60
Ncm M3 and M3.5 screws
IS
-
-
10
A
TC=25°C
Diode pulse current
IS,pulse
-
-
32.4
A
TC = 25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
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