IPP60R099CPAAKSA1

IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Type Package Marking IPP60R099CPA PG-TO220-3-1 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 31 T C=100 °C 19 Pulsed drain current1) I D,pulse T C=25 °C 93 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 Avalanche energy, repetitive t AR1),2) E AR I D=11 A, V DD=50 V 1.2 Avalanche current, repetitive t AR1),2) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage Unit A mJ 11 A V DS=0...480 V 50 V/ns V GS static ±20 V Power dissipation P tot T C=25 °C 255 W Operating temperature Tj -40 ... 150 °C Storage temperature T stg -40 ... 150 Mounting torque Rev. 2.2 M3 and M3.5 screws page 1 60 Ncm 2009-11-25 IPP60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Value Unit 18 A T C=25 °C Diode pulse current 1) I S,pulse 93 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit min. typ. max. - - 0.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 5 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A, T j=25 °C - 0.09 0.105 Ω V GS=10 V, I D=18 A, T j=150 °C - 0.24 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.2 RG page 2 Ω 2009-11-25 IPP60R099CPA Parameter Values Symbol Conditions Unit min. typ. max. - 2800 - - 130 - - 130 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related4) C o(er) Effective output capacitance, time related5) C o(tr) - 340 - Turn-on delay time t d(on) - 10 - Rise time tr - 5 - Turn-off delay time t d(off) - 60 - Fall time tf - 5 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 20 - Gate charge total Qg - 60 80 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 450 - ns - 12 - µC - 70 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=18 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=18 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD