MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPx60R160P6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor
IPW60R160P6,IPB60R160P6,IPP60R160P6,
IPA60R160P6
1Description
TO-247
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
D²PAK
TO-220
tab
tab
2
1
3
TO-220FP
Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
160
mΩ
Qg.typ
44
nC
ID,pulse
68
A
Eoss@400V
5.7
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
IPW60R160P6
PG-TO 247
IPB60R160P6
PG-TO 263
IPP60R160P6
PG-TO 220
IPA60R160P6
PG-TO 220 FullPAK
Final Data Sheet
Marking
6R160P6
2
RelatedLinks
see Appendix A
Rev.2.2,2015-07-10
600VCoolMOS™P6PowerTransistor
IPW60R160P6,IPB60R160P6,IPP60R160P6,
IPA60R160P6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Final Data Sheet
3
Rev.2.2,2015-07-10
600VCoolMOS™P6PowerTransistor
IPW60R160P6,IPB60R160P6,IPP60R160P6,
IPA60R160P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
23.8
15.0
A
TC=25°C
TC=100°C
-
68
A
TC=25°C
-
-
497
mJ
ID=4.1A; VDD=50V; see table 12
EAR
-
-
0.75
mJ
ID=4.1A; VDD=50V; see table 12
Avalanche current, repetitive
IAR
-
-
4.1
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-220, TO-263, TO-247
Ptot
-
-
176
W
TC=25°C
Power dissipation (FullPAK)
TO-220FP
Ptot
-
-
34
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque (Non FullPAK)
TO-220, TO-247
-
-
-
60
Ncm M3 and M3.5 screws
Mounting torque (FullPAK)
TO-220FP
-
-
-
50
Ncm M2.5 screws
Continuous diode forward current
IS
-
-
20.6
A
TC=25°C
Diode pulse current
IS,pulse
-
-
68
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
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