IPP60R160P7
MOSFET
600VCoolMOSªP7PowerTransistor
PG-TO220
tab
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya
lowRDS(on)*A(below1Ohm*mm²)
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
smallerfootprintandhighermanufacturingqualitydueto>2kVESD
protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
160
mΩ
Qg,typ
31
nC
ID,pulse
66
A
Eoss @ 400V
3.5
µJ
Body diode diF/dt
900
A/µs
Type/OrderingCode
Package
IPP60R160P7
PG-TO 220-3
Final Data Sheet
Marking
60R160P7
1
RelatedLinks
see Appendix A
Rev.2.0,2019-02-26
600VCoolMOSªP7PowerTransistor
IPP60R160P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.0,2019-02-26
600VCoolMOSªP7PowerTransistor
IPP60R160P7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
20
13
A
TC=25°C
TC=100°C
-
66
A
TC=25°C
-
-
69
mJ
ID=4.1A; VDD=50V; see table 10
EAR
-
-
0.35
mJ
ID=4.1A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
4.1
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
80
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
81
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
60
Ncm M3 and M3.5 screws
IS
-
-
20
A
TC=25°C
Diode pulse current
IS,pulse
-
-
66
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
50
V/ns
VDS=0...400V,ISD
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