IPP65R074C6XKSA1

IPP65R074C6 MOSFET 650VCoolMOSªC6PowerTransistor PG-TO220 tab CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, Telecom,UPSandSolar. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.074 Ω Qg,typ 138 nC ID,pulse 151 A Eoss @ 400V 10.8 µJ Body diode di/dt 300 A/µs Type/OrderingCode Package Marking IPP65R074C6 PG-TO 220-3 65C6074 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Values Min. Typ. Max. 57.7 Unit Note/TestCondition A TC=25°C TC=100°C 31.6 Pulsed drain current2) ID‚pulse 151 A TC=25°C Avalanche energy, single pulse EAS 915 mJ ID=8.1A,VDD=50V Avalanche energy, repetitive EAR 1.40 mJ ID=8.1A,VDD=50V Avalanche current, repetitive IAR 8.1 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS -20 20 V static -30 30 Power dissipation (non FullPAK) PG-TO 220 Ptot Operating and storage temperature Tj‚Tstg -55 Mounting torque (non FullPAK) PG-TO 220 AC (f > 1 Hz) TC=25°C 480.8 W 150 °C 60 Ncm M3 and M3.5 screws Continuous diode forward current IS 50.0 A TC=25°C Diode pulse current IS‚pulse 151 A TC=25°C Reverse diode dv/dt dv/dt 15 V/ns Maximum diode commutation speed dif/dt 300 A/µs VDS=0...480V,ISD≤ID, Tj=25°C 3) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj max 3) Vpeak7V;TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 Typ.outputcharacteristics Typ.outputcharacteristics 180 100 20 V 160 140 20 V 10 V 90 10 V 8V 80 8V 7V 6V 6V 5.5 V 100 ID[A] ID[A] 120 5V 80 4.5 V 60 5.5 V 50 5V 4.5 V 40 60 30 40 20 20 0 7V 70 10 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance 1.00 0.25 0.90 0.80 0.20 0.70 0.15 RDS(on)[Ω] RDS(on)[Ω] 0.60 0.50 0.40 0.30 5V 5.5 V 6V 6.5 V 0.10 98% typ 7V 10 V 0.20 0.05 0.10 0.00 0 20 40 0.00 -60 60 -20 20 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=13.9A;VGS=10V 8 Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 Typ.transfercharacteristics Typ.gatecharge 160 10 25 °C 9 140 120 V 8 480 V 120 7 6 150 °C 80 VGS[V] ID[A] 100 5 4 60 3 40 2 20 0 1 0 2 4 6 8 0 10 0 50 VGS[V] 100 150 Qgate[nC] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj VGS=f(Qgate);ID=20.8Apulsed;parameter:VDD Forwardcharacteristicsofreversediode Avalancheenergy 2 10 1000 900 800 125 °C 25 °C 700 101 IF[A] EAS[mJ] 600 500 400 0 10 300 200 100 10-1 0.0 0.5 1.0 1.5 0 0 50 VSD[V] IF=f(VSD);parameter:Tj Final Data Sheet 100 150 200 Tj[°C] EAS=f(Tj);ID=8.1A;VDD=50V 9 Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 Drain-sourcebreakdownvoltage Typ.capacitances 104 760 740 Ciss 720 103 700 660 C[pF] VBR(DSS)[V] 680 640 102 Coss 620 Crss 600 101 580 560 540 -60 -20 20 60 100 140 180 100 0 100 200 Tj[°C] 300 400 500 600 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Typ.Cossstoredenergy 25 20 Eoss[µJ] 15 10 5 0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 6PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 12 Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 7AppendixA Table11RelatedLinks • IFXC6ProductBrief:www.infineon.com • IFXC6Portfolio:www.infineon.com • IFXCoolMOSWebpage:www.infineon.com • IFXDesignTools:www.infineon.com Final Data Sheet 13 Rev.2.2,2018-01-29 650VCoolMOSªC6PowerTransistor IPP65R074C6 RevisionHistory IPP65R074C6 Revision:2018-01-29,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2011-09-14 Final Datasheet Release 2.2 2018-01-29 Changed I_GSS Test condition in Table 4, Page 6 TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.2,2018-01-29