IPS021STRL

Data Sheet No.PD 60148-K IPS021(S) FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description Rds(on) 150mΩ (max) V clamp 50V Ishutdown 5A Ton/Toff The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. 1.5µs Packages 3-Lead D2Pak IPS021S 3-Lead TO-220 IPS021 Typical Connection Load R in series (if needed) D IN Q control S S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS021(S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Min. Max. — 47 Maximum input voltage -0.3 7 V Maximum IN current -10 +10 mA (rth=62oC/W) IPS021 — 2.8 (rth=10oC/W) IPS021 — 8 (rth=80oC/W) — 2.2 — 10A Vds Vin Maximum drain to source voltage Iin, max Isd cont. Units Test Conditions Diode max. continous current (1) IPS021S Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation(1) (rth=62oC/W) IPS021 — 2 (rth=80oC/W) IPS021S — 1.56 ESD1 Electrostatic discharge voltage (Human Body) — 4 ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 T stor. Tj max. Max. storage temperature -55 150 Max. junction temperature. -40 150 Tlead Lead temperature (soldering, 10 seconds) — 300 A W C=100pF, R=1500Ω, kV o C=200pF, R=0Ω, L=10µH C Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance free air junction to case with standard footprint with 1" square footprint junction to case Min. Typ. — — — — — 60 5 80 50 5 Max. Units Test Conditions — — — — — TO-220 o C/W D2PAK (SMD220) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vds (max) VIH VIL I ds — 4 0 — 35 6 0.5 1.8 0.5 — 0 5 1 1 Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C ( TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) Rin Recommended resistor in series with IN pin Tr-in (max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) Units V A kΩ µS kHz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. Notes. 2 www.irf.com IPS021(S) Static Electrical Characteristics Standard footprint 70 µm copper thickness. Tj = 25oC (unless otherwise specified.) Symbol Parameter ON state resistance Tj = 25oC Tj = 150oC Idss 1 Drain to source leakage current Idss 2 Drain to source leakage current V clamp 1 Drain to source clamp voltage 1 V clamp 2 Drain to source clamp voltage 2 Vin clamp IN to source clamp voltage Vth IN threshold voltage Iin, -on ON state IN positive current Iin, -off ON state IN positive current Rds(on) Min. Typ. 100 — 0 0 130 220 0.01 0.1 48 50 7 1 25 50 54 56 8 1.5 90 130 Max. Units Test Conditions 150 280 25 50 56 60 9.5 2 200 250 mΩ µA V µA Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25 oC Vcc = 40V, Tj = 25 oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 14V, Resistive Load = 10Ω, Rinput = 50Ω, 100µs pulse, Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Ton Tr Trf Toff Tf Qin 0.15 0.4 2 0.8 0.5 — 0.5 0.9 6 2 1.3 3.3 Min. Typ. — 4 1.5 2 — 165 5.5 2.3 10 400 Turn-on delay time Rise time Time to (final Rds(on) 1.3) Turn-off delay time Fall time Total gate charge Typ. Max. Units Test Conditions 1 2 12 3.5 2.5 — See figure 2 µs See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd Vreset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) www.irf.com Max. Units Test Conditions — 7 3 40 — o C A V µs µJ See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V 3 IPS021(S) Functional Block Diagram All values are typical DRAIN 47 V 1000 Ω IN 8.1 V S Q R Q 200 kΩ I sense 80 µA T > 165°c I > Isd SOURCE Lead Assignments 2 (D) 2 (D) 1 3 In D S 1 In 2 D 3 S TO-220 D2PAK (SMD220) IPS021 IPS021S Part Number 4 www.irf.com IPS021(S) Vin 5V 90 % Vin 10 % 0V Tr-in t > T reset t < T reset Ids 90 % I shutdown Ids Isd 10 % Td on Td off tf tr T Vds T shutdown Tsd (165 °c) Figure 2 - IN rise time & switching time definitions Figure 1 - Timing diagram T clamp Vin L Rem : V load is negative during demagnetization V load + R 14 V - Ids Vin Vds clamp ( Vcc ) Vds 5v 0v D IN Vds S Ids ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com Figure 4 - Active clamp test circuit 5 IPS021(S) All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 300 200% 180% 250 160% 140% Tj = 150oC 200 120% 100% 150 80% 100 o 60% Tj = 25 C 40% 50 20% 0% -50 -25 0 0 1 2 3 4 5 6 7 8 8 75 100 125 150 175 4 ton de lay ris e tim e 130% rds on 9 25 50 Figure 6 - Normalized Rds(on) (%) Vs Tj (oC) Figure 5 - Rds ON (mΩ) Vs Input Voltage (V) 10 0 toff delay fall tim e 3 7 6 5 2 4 3 1 2 1 0 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) 6 0 0 1 2 3 4 5 6 7 8 Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) www.irf.com IPS021(S) 1 00 100 delay off delay on rise time 130% rdson fall time 10 10 1 1 0 .1 0 .1 10 100 1000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs IN Resistor (Ω) 8 10 100 1000 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) 6 5 6 4 4 3 2 2 Isd 25°C 1 Ilim 25°C 0 0 0 1 2 3 4 5 6 7 Figure 11 - Current Iim. & I shutdown (A) Vs Vin (V) www.irf.com 8 -50 -25 0 25 50 75 100 125 150 Figure 12 - I shutdown (A) Vs Temperature (oC) 7 IPS021(S) 8 100 rth = 5°C/W rth = 15°C/W 1" footprint 35°C/W std. footprint 60°C/W 7 6 T=25°C Std. footprint T=100°C Std. footprint 5 4 Current path capability should be above this curve 10 3 2 1 0 -50 Load characteristic should be below this curve 0 50 100 150 200 Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC) IPS021/IPS021S s ingle puls e m ax. curre nt 100 Hz rth=60°C/W dT=25°C 1k Hz rth=60°C/W dT=25°C 10 1 1 Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS021 & IPS021S 1 Vbat = 14 V Tjini = T sd Vbat = 14 V Tjini = T sd 0.1 0 .0 1 0 .1 1 10 100 Figure 15a - Iclamp (A) Vs Inductive Load (mH) IPS021 8 single pulse 100 Hz rth=60°C/W dT=25°C 1kHz rth=60°C/W dT=25°C 10 0.1 0 .0 1 0 .1 1 10 100 Figure 15b - Max. Iclamp (A) Vs Inductive Load (mH) IPS021S www.irf.com IPS021(S) 200 1 00 180 160 10 140 120 100 1 80 Single pulse 0 .1 60 40 Iin,on 20 Iin,off 0 0 .0 1 -50 14 Treset rise tim e 12 fall tim e 0 25 50 75 100 125 150 Figure 17 - Input Current (uA) Vs Junction Temperature (oC) Figure 16 - Transient Thermal Imped. ( oC/W) Vs Time (s) 16 -25 120% 115% 110% 10 105% 8 100% 6 95% 4 90% Vds clamp @ Isd 2 85% Vin clamp @ 10mA 0 -50 80% -25 0 25 50 75 100 125 150 Figure 18 - Rise Time, Fall Time and Treset (µs) Vs Tj (oC) www.irf.com -50 -25 0 25 50 75 100 125 150 Figure 19 -Vin clamp and Vds clamp (%) Vs Tj ( oC) 9 IPS021(S) Case Outline 2 NOTES: 2X 3-Lead TO-220AB 3-Lead D2PAK 10 01-6024 00 IRGB 01-3026 01 (TO-220AB) 01-6022 00 01-0016 05 (TO-263AB) www.irf.com IPS021(S) Tape & Reel - D2PAK (SMD220) 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/