IPS031

Data Sheet No.PD 60150-J IPS031(S) FULLY PROTECTED POWER MOSFET SWITCH Product Summary Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS031/IPS031S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Rds(on) 60mΩ (max) V clamp 50V Ishutdown 12A Ton/Toff 1.5µs Packages 3-Lead D2Pak IPS031S 3-Lead TO-220 IPS031 Typical Connection Load R in series (if needed) D IN Q control S S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS031(S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. Symbol Parameter Min. Max. — 47 Maximum input voltage -0.3 7 V Maximum IN current -10 +10 mA rth=62oC/W IPS031 — 2.8 rth=5oC/W — Vds Maximum drain to source voltage Vin Iin, max Isd cont. Diode max. continuous current (1) rth=80oC/W IPS031 IPS031S Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation(1) — 18 2.2 — 18 (rth=62oC/W) IPS031 — 2 (rth=80oC/W) IPS031S — 1.56 ESD1 Electrostatic discharge voltage (Human Body) — 4 ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 T stor. Tj max. Max. storage temperature -55 150 Max. junction temperature -40 +150 Tlead Lead temperature (soldering, 10 seconds) — 300 Min. Typ. — — — — — 60 3 80 60 3 Units Test Conditions TO220 free air TO220 with Rth=5oC/W SMD220 Std. footprint A W C=100pF, R=1500Ω, kV o C=200pF, R=0Ω, L=10µH C Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance free air junction to case with standard footprint with 1" square footprint junction to case Max. Units Test Conditions — — — — — TO-220 o C/W D2PAK (SMD220) Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vds (max) VIH VIL I ds — 4 0 35 6 0.5 — — 0.2 — 0 3.1 2.8 5 1 1 Continuous drain to source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 o C (TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS031 (TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS031S Rin Recommended resistor in series with IN pin Tr-in(max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) Units V A kΩ µS kHz (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application. Notes. 2 www.irf.com IPS031(S) Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter Rds(on) Rds(on) Idss Min. Typ. ON state resistance Tj = 25oC ON state resistance Tj = 150oC Drain to source leakage current 20 — 0 45 75 0.5 Max. Units Test Conditions 60 100 25 Drain to source leakage current 0 5 50 Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current 47 50 7 1 25 50 52 53 8.1 1.6 90 130 56 60 9.5 2 200 250 @Tj=25oC Idss2 mΩ Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC µA Vcc = 40V, Tj = 25oC @Tj=25oC V clamp 1 V clamp 2 Vin clamp Vth Iin, -on Iin, -off V µA Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5Ω , Rinput = 50Ω, 100µs pulse,Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Ton Tr Trf Toff Tf Qin 0.05 0.4 — 0.8 0.5 — 0.3 1 8 2 1.5 11 Min. Typ. — 10 1.5 2 — 165 14 2.3 10 400 Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge Typ. Max. Units Test Conditions 0.6 2 — 3.5 2.5 — See figure 2 µs See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd V reset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) www.irf.com Max. Units Test Conditions — 18 3 40 — o C A V µs µJ See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V 3 IPS031(S) Functional Block Diagram All values are typical DRAIN 47 V 300 Ω IN 8.1 V S Q R Q 200 kΩ I sense 80 µA T > 165°c I > 1sd SOURCE Lead Assignments 2 (D) 2 (D) 1 3 In D S 1 In 2 D 3 S TO-220 D2PAK (SMD220) IPS031 IPS031S Part Number 4 www.irf.com IPS031(S) Vin 5V 90 % 0V Vin 10 % Tr-in t < T reset Ids t > T reset I shutdown Isd 90 % Ids 10 % Td on Td off tr T tf T shutdown Tsd Vds (165 °c) Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp L Vin Rem : V load is negative during demagnetization V load + R 14 V - Ids Vin Vds clamp 5v 0v ( Vcc ) Vds D IN Vds S Ids ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com Figure 4 - Active clamp test circuit 5 IPS031(S) All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 100 200% 90 180% 80 160% 70 140% o Tj = 150 C 120% 60 100% 50 40 80% o Tj = 25 C 30 60% 20 40% 10 20% 0 0 1 2 3 4 5 6 7 8 0% -50 -25 25 50 75 100 125 150 175 Figure 6 - Normalised Rds ON (%) Vs Tj (oC) Figure 5 - Rds ON (mΩ) Vs Input Voltage (V) 10 10 9 9 8 8 toff delay fall tim e 7 7 ton delay rise tim e 130% final rdson 6 5 4 6 5 4 3 3 2 2 1 1 0 0 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) 6 0 0 1 2 3 4 5 6 7 8 Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) www.irf.com IPS031(S) 100 100 delay off delay on rise tim e 130% rdson fall tim e 10 10 1 1 0 .1 0 .1 10 100 1000 10 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs IN Resistor (Ω) 1000 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) 20 20 18 18 16 16 14 14 12 12 10 10 8 8 6 100 6 4 Isd 25°C 4 2 Ilim 25°C 2 0 0 1 2 3 4 5 6 7 Figure 11 - Current Iimitation & I shutdown (A) Vs Vin (V) www.irf.com 8 0 -50 -25 0 25 50 75 100 125 150 Figure 12 - I shutdown (A) Vs Temperature (oC) 7 IPS031(S) 100 20 rth = 5°C/W rth = 15°C/W 1" footprint 35°C/W std. footprint 60°C/W 18 16 14 - - - - Tj=25 °C _____Tj = 100 °C Free air / standard footprint 12 10 10 8 6 4 2 0 -50 0 50 100 150 200 1 Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031 & IPS031S Figure 13 - Max.Cont. Ids (A) Vs Amb. Temperature (oC) 100 s ingle puls e m ax. curre nt 100 Hz rth=60°C/W dT=25°C 1k Hz rth=60°C/W dT=25°C 100 10 10 1 1 0.1 0.1 0 .0 1 Vbat = 14 V Tjini = T sd 0.01 0 .1 1 10 100 Figure 15 - Iclamp (A) Vs Inductive Load (mH) 8 ____ Rth free air/std. footprint - - - - - Rth junction to case Fig.16 - Transient Thermal Impedance (oC/W) Vs Time (s) - IPS031/IPS031S www.irf.com IPS031(S) 200 120% 180 115% 160 110% 140 120 105% 100 100% 80 95% 60 90% 40 Iin,on 20 Iin,off 85% 0 80% -50 -25 0 -50 -25 25 50 75 100 125 150 Figure 17 - Input current (µA) Vs Junction (oC) 16 14 Treset rise tim e 12 fall tim e Vds clam p @ Isd Vin clam p @ 10m A 0 25 50 75 100 125 150 Figure 18 - Vin clamp and V clamp2 (%) Vs Tj (oC) 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and treset (µs) Vs Tj (oC) www.irf.com 9 IPS031(S) Case Outline 2 NOTES: 2X 3-Lead TO-220AB 3-Lead D2PAK 10 01-6024 00 IRGB 01-3026 01 (TO-220AB) 01-6022 00 01-0016 05 (TO-263AB) www.irf.com IPS031(S) Tape & Reel - D2PAK (SMD220) 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/