IPS511GTR

Data Sheet No.PD60156-K IPS511G/IPS512G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Rds(on) 150mΩ (max) V clamp 50V I Limit 5A V open load 3V Description The IPS511G/IPS512G are fully protected five terminal high side switches with built in short-circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, overtemperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Truth Table Typical Connection Available Package Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out H H L L H H L H H L (limiting) L L H L (cycling) L L Dg H L H H L L L L + VCC + 5v 15K Status feedback Output pull-up resistor Vcc Dg Logic Rdg Rin Logic signal www.irf.com control Out In Gnd Load Logic Gnd Load Gnd 8 Lead SOIC (Single) IPS511G 16 Lead SOIC (Dual) IPS512G 1 IPS511G/IPS512G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified). Symbol Parameter Min. Max. Vcc-50 Vcc+0.3 Maximum logic ground to load ground offset Vcc-50 Vcc+0.3 Units Vout Voffset Maximum output voltage Vin Iin, max Maximum Input voltage -5 10 Vdg Idg, max Maximum diagnostic output voltage -0.3 5.5 V Maximum diagnostic output current -1 10 mA Isd cont. Diode max. continuous current (1) -0.3 Maximum IN current (IPS511G) — 1.4 — 0.8 Isd pulsed Diode max. pulsed current (1) — 10 ESD1 — 4000 ESD2 Electrostatic discharge voltage (Machine Model) — 500 Pd Maximum power dissipation (rth=125oC/W) IPS511G — 1 — 1.5 (rth=85oC/W, both legs on) IPS512G V 5.5 (per leg/both legs ON - IPS512G) Electrostatic discharge voltage (Human Body) Test Conditions mA A C=100pF, R=1500Ω, V C=200pF, R=0Ω, L=10µH W o Tj max. Max. storage & operating junction temp. -40 +150 Vvv max Maximum Vcc voltage — 50 Min. Typ. — —  & a a — 85 — — 100 — — # — C V Thermal Characteristics Symbol Parameter Rth1 Rth2 Rth1 Thermal resistance with standard footprint Thermal resistance with 1" square footprint Thermal resistance with standard footprint (2 mos on) (2 mosfets on) Rth2 (1) Thermal resistance with standard footprint (1 mos on) (1 mosfet on) Rth2 Thermal resistance with 1" square footprint (2 mos on) (2 mosfets on) Max. Units Test Conditions 8 Lead SOIC o C/W 16 Lead SOIC (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS511G/IPS512G Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vcc VIH VIL Iout 5.5 4 -0.3 35 5.5 0.9 — 1.4 — 4 10 1.0 6 20 Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current Tamb=85 oC (TAmbient = 85oC, Tj = 125oC, rth = 100oC/W) IPS511G Iout Continuous output current per leg Tamb=85 oC (TAmbient = 85oC, Tj = 125oC Rth = 85oC/W both legs on) IPS512G Rin Recommended resistor in series with IN pin Rdg Recommended resistor in series with DG pin Units V A kΩ Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. ON state resistance Tj = 25oC — 130 150 ON state resistance @ Vcc = 6V — 130 150 ON state resistance Tj = 150oC — 220 — Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac Vdgl Iol Iol Idg Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current 5.5 50 — — — — — — — 0 — 56 58 0.9 16 0.7 35 — 65 1.2 50 2 — 0.4 120 25 leakage Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis — — — 1 — 0.1 2.3 2 70 0.25 Rds(on) Max. Units Test Conditions Vin = 5V, Iout = 2.5A @Tj=25o C Rds(on) (V cc=6V) Rds(on) mΩ Vin = 5V, Iout = 1A Vin = 5V, Iout = 2.5A @Tj=150oC Vih Vil Iin, on In, hyst. www.irf.com 20 0.15 60 — 10 2.5 — 200 0.5 V µA mA µA V µA Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V V µA V Vin = 5V 3 IPS511G/IPS512G Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5.6Ω, Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Tdon Tr1 Tr2 Turn-on delay time Rise time to Vout = Vcc - 5V Rise time from the end of TR1 to Vout = 90% of Vcc dV/dt (on) Turn ON dV/dt E on Turn ON energy Tdoff Turn-off delay time Tf Fall time to Vout = 10% of Vcc dV/dt (off) Turn OFF dV/dt Eoff Turn OFF energy Tdiag Vout to Vdiag propagation delay Typ. Max. Units Test Conditions — — 7 10 — — — — — — — — 45 1.3 400 15 10 2 80 5 Min. Typ. 3 — — 2 2 5 165 158 3 3 50 50 95 4 — 50 50 6 — 15 µs V/µs µJ µs See figure 3 See figure 4 V/µs µJ µs Protection Characteristics Symbol Parameter Ilim Internal current limit Tsd+ Over-temp. positive going threshold TsdOver-temp. negative going threshold Vsc Short-circuit detection voltage (3) Vopen load Open load detection threshold Max. Units Test Conditions 7 — — 4 4 A oC oC V V Vout = 0V See fig. 2 See fig. 2 See fig. 2 (3) Referenced to Vcc Lead Assignments Vcc Vcc Vcc Vcc In1 Gnd1 Vcc Vcc Vcc Vcc Out2 Dg2 1 GND IN 1 DG OUT Dg1 Out1 Vcc Vcc Vcc Vcc Gnd2 In2 8 Lead SOIC 16 Lead SOIC IPS512G IPS511G Part Number 4 www.irf.com IPS511G/IPS512G Functional Block Diagram All values are typical VCC Under voltage lock out 50V Over temperature 165°C 158°C Tj Charge pump 62 V 2.7 V IN Level shift 2.2 V 7 V 200 KΩ driver - DG Current limit + 5A 7 V 40Ω 3V + - + Open load Short-circuit GND T clamp - 3V VOUT Vin 5V 0V Vin Iout limiting T shutdown cycling Ilim. Iout ( + Vcc ) T 0V Out V clamp Tsd+ Tsd(160 ° ) ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms www.irf.com Figure 2 - Protection timing diagram 5 IPS511G/IPS512G Vin Vcc 90% Vin Vcc - 5V Vout 90% dV/dt on 10% dV/dt off Td on Vout Tr 1 Tr 2 E1(t) 10% Iout1 Eon1 Td off Iout2 Resistive load Tf E2 (t) Inductive load Eon2 Figure 4 - Switching times definition (turn-off) Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load V in Dg Vcc IN Vcc Vcc -Vsc Out + Gnd L Vin 14 V V o ut Vout Vol R V d ia g 5v 0v Iout Diag off blanking Diag on blanking Rem : V load is negative during demagnetization Figure 5 - Active clamp test circuit 6 T diag Figure 6 - Diagnostic delay definitions www.irf.com IPS511G/IPS512G 150 2 00 % 100 1 50 % 50 1 00 % 0 0 5 10 15 20 25 30 5 0% 35 -5 0 0 50 100 150 Figure 8 - Normalized Rds(on) Vs Tj (oC) Figure 7 - Rds(on) (mΩ) Vs Vcc (V) 10 150 100 1 50 0.1 0 0 1 2 3 4 Figure 9 - Rds(on) (mΩ) Vs Iout (A) www.irf.com 5 Figure 10 - Max. Iout (A) Vs Load Inductance (uH) 7 IPS511G/IPS512G 5 5 4 4 1inch² footprint Rthja= 60°C/W 3 3 Standard footprint one leg on 2 2 Standard footprint Rth=100°C/W 1 1 0 Standard footprint both legs on 0 25 50 75 100 125 150 25 Figure 11a - Max load current (A) Vs Tamb (oC) IPS511G 50 75 100 125 150 Figure 11b - Max load current (A) Vs Tamb (oC) IPS512G 6 10 0 5 10 4 3 1 2 0,1 1 Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (S) - IPS511G/IPS512G 8 1E+03 1E+02 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0,01 0 -50 0 50 100 150 Figure 13 - Ilim (A) Vs Tj (oC) www.irf.com IPS511G/IPS512G Resistive load 600 10000 1000 I=Imax vs Induct.(see fig.10) Eon 400 Eoff 100 I=1.5A 10 200 1 Figure 14 - Eon, Eoff (µJ) vs I (A) 1E+06 1E+05 0.1 3 1E+04 2 1E+03 1 1E+02 0 1E+01 0 Figure 15 - Eon (µJ) Vs Load Inductance (µH) (see Fig. 3) 1.00E-03 150 125 Diag on blanking 100 1.00E-04 75 50 1.00E-05 25 Diag off blanking 0 1.00E-06 0 1 2 Figure 16 - Diag Blanking time (µS) Vs Iout (A) (resistive load - see Fig. 6) www.irf.com 3 0 5 10 15 20 25 30 35 Figure 17 - Icc (mA) Vs Vcc (V) 9 IPS511G/IPS512G Case Outline - IPS511G 8 Lead SOIC 10 (MS-012AA) 01-0021 09 www.irf.com IPS511G/IPS512G Case Outline 16 Lead SOIC (narrow body) 01-3064 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 5/9/2000 www.irf.com 11