IPS5451STRL

Data Sheet No.PD60159-K IPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Rds(on) 25mΩ (max) V clamp 50V Ishutdown 35A Iopen load 1A Description The IPS5451/IPS5451S are fully protected five terminal high side switch with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The over-current protection latches off the device if the output current exceeds Ishutdown. It can be reset by turning the input pin low. The overtemperature protection turns off the high side switches if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7oC below Tshutdown. A diagnostic pin is provided for status feedback of over-current, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Truth Table Typical Connection Packages Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out Dg H H H L L H H H L L X H H L (latched) L L L H H L (cycling) L (cycling) L L H + VCC + 5v 15K Status feedback Vcc Dg Logic Rdg Rin Logic signal www.irf.com control 5 Lead SMD220 - IPS5451S Out In Gnd Load Logic Gnd Load Gnd 5 Lead TO220 - IPS5451 1 IPS5451/IPS5451S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (TAmbient = 25oC unless otherwise specified). Symbol Parameter Min. Max. Vcc-45 Vcc+0.3 Maximum logic ground to load ground offset Vcc-45 Vcc+0.3 Units Vout Voffset Maximum output voltage Vin Iin, max Maximum Input voltage -5 10 Vdg Idg, max Maximum diagnostic output voltage -0.3 5.5 V Maximum diagnostic output current -1 10 mA Isd cont. Diode max. continuous current (1) (rth=62oC/W) IPS5451 — 2.8 (rth=80oC/W) IPS5451S — 2.2 Isd pulsed Diode max. pulsed current (1) — 45 ESD1 — 4 -0.3 Maximum IN current Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) — 0.5 Pd Maximum power dissipation(1) (rth=62oC/W) IPS5451 — 2 — 1.56 IPS5451S Tj max. Max. storage & operating junction temp. -40 +150 Tlead Lead temperature (soldering 10 seconds) — 300 — 45 Min. Typ. Vcc max. Maximum Vcc voltage V 5.5 ESD2 (rth=80oC/W) Test Conditions mA A C=100pF, R=1500Ω, kV C=200pF, R=0Ω, L=10µH W o C V Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance resistance resistance resistance resistance junction to case junction to ambient with standard footprint with 1" square footprint junction to case — — — — — ## 60 35 # Max. Units Test Conditions a a a a a TO-220 o C/W D2PAK (SMD220) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 WWW.IRF.COM IPS5451/IPS5451S Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vcc VIH VIL 1 Iout 5.5 4 -0.3 18 5.5 0.9 — — 4 3.5 — 4 10 14 6 20 Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current (TAmbient = 85oC, Tj = 125oC, Rth = 62oC/W) IPS5451 (TAmbient = 85oC, Tj = 125oC, Rth = 80oC/W) IPS5451S Iout Continuous output current Tc=85oC (TCase = 85oC, IN = 5V, Tj = 125oC, Rth = 5oC/W) Rin Recommended resistor in series with IN pin Rdg Recommended resistor in series with DG pin Units V A kΩ Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Rds(on) Min. Typ. ON state resistance Tj = 25oC — 19 Max. Units Test Conditions 25 ON state resistance @ Vcc = 6V — 22 30 ON state resistance Tj = 150oC — 32 — Functional operating range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Output leakage current 5.5 45 — — — — 49 50 0.9 10 18 — 60 1.2 50 Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Diagnostic output leakage current — — — — — 10 3.5 20 0.1 1.5 50 10 — 0.4 10 IN high threshold voltage IN low threshold voltage On state IN positive current Vcc UVLO positive going threshold Vcc UVLO negative going threshold Input hysteresis a 1 — — 3.0 0.2 2.7 2.0 30 4.7 4.4 0.6 3.4 a 80 5.5 — 1.5 Vin = 5V, Iout = 14A @Tj=25oC Rds(on) (Vcc =6V) Rds(on) mΩ Vin = 5V, Iout = 7A Vin = 5V, I out = 14A o @Tj=150 C Vcc oper. V clamp 1 V clamp 2 Vf Iout Id = 10mA (see Fig.1 & 2) Id = Ishutdown (see Fig.1 & 2) Id = 14A, Vin = 0V Vout = 0V, Tj = 25oC µA leakage Icc off Icc on Icc ac Vdgl Idg V mA µA V µA Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vdg = 4.5V leakage Vih Vil Iin, on Vccuv+ VccuvInhyst. WWW.IRF.COM V µA Vin = 4V V 3 IPS5451/IPS5451S Switching Electrical Characteristics Vcc = 14V, Resistive Load = 1Ω, Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Tdon Tr1 Tr2 Turn-on delay time Rise time to Vout = Vcc - 5V Rise time from the end of Tr1 to Vout = 90% of Vcc dV/dt (on) Turn ON d V/dt Eon Turn ON energy Td off Turn-off delay time Tf Fall time to V out = 10% of Vcc dV/dt (off) Turn OFF d V/dt Eoff Turn OFF energy Typ. Max. Units Test Conditions — — 5 4 20 20 — — — — — — — 65 3 3 65 8 5 0.75 150 6 — 150 20 10 — Min. Typ. — — 22 0.3 — — 165 158 35 1 50 7 µs See figure 3 V/µs mJ µs See figure 4 V/µs mJ Protection Characteristics Symbol Parameter T sd+ T sdI sd Iopen load T reset Tdg Over-temp. positive going threshold Over-temp. negative going threshold Over-current threshold Open load detection threshold Minimum time to reset protections Blanking time before considering Dg Max. Units Test Conditions — — 50 2 — 100 o C C A A µs µs o See fig. 2 See fig. 2 See fig. 2 Vin = 0V Part turned on with Vin =5V Functional Block Diagram All values are typical VCC 4.5 V 50V 4.2 V Under voltage lock out 62 V Charge pump 2.6 V IN Level shift 2.0 V 5.5V 200 KΩ S Q Over current Over DG R driver + 35 A - temperature 165°C 5.5V 158°C Tj 40 Ω + Open load GND 4 22 mV - VOUT WWW.IRF.COM IPS5451/IPS5451S Lead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out 12345 12345 5 Lead - D2PAK (SMD220) 5 Lead - TO220 IPS5451 IPS5451S Part Number T clamp Vin 5V 0V Vin t < T reset Iout t > T reset I shutdown I shutdown OI Iout ( + Vcc ) Out T 0V T shutdown + Tsd+ (160 ° ) V clamp T shutdown - ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms WWW.IRF.COM Figure 2 - Protection timing diagram 5 IPS5451/IPS5451S Vin Vin Vcc 90% Vcc - 5V 90% Vout dV/dt off dV/dt on Vout 10% Td on 10% Tr 1 Tr 2 Td off E1(t) Tf Iout1 Eon1 Iout2 Resistive load E2 (t) Inductive load Eon2 Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load Figure 4 - Switching times definition (turn-off) 1,00E-02 Vin = 5 V Dg Vcc IN 1,00E-03 Out + Gnd L Vin 14 V 1,00E-04 Vout Vin = 0 V (sleep mode) R 5v 0v 1,00E-05 Iout 1,00E-06 Rem : V load is negative during demagnetization Figure 5 - Active clamp test circuit 6 0 5 10 15 20 25 30 35 Figure 6 - Icc (mA) Vs Vcc (V) WWW.IRF.COM IPS5451/IPS5451S 5 50 40 4 30 3 20 2 10 1 0 -50 -25 0 25 50 75 100 125 150 VIH VIL Hys teres is 0 -50 -25 Figure 7 - Iin ( µA ) Vs Tj (°C) 0 25 50 75 100 125 150 Figure 8 - VIH, VIL threshold ( V ) Vs Tj (°C) 40 25 20 30 15 20 10 10 5 0 0 0 5 10 15 20 Figure 9 - Rdson (mΩ) vs Vcc (V) WWW.IRF.COM 25 -50 -25 0 25 50 75 100 125 150 Figure 10 - Rdson (mΩ) vs Tj (°C) 7 IPS5451/IPS5451S 25 1000 Tj=25oC Free air/ std footprint 20 15 100 Current path capacity should be above this curve 10 Load characteristic should be below this curve 5 25 Figure 11 - Rdson (mΩ) vs Iout (A) 50 1E-3 Figure 12 - Isd (A) vs Time (S) 30 rth = 5°C/W rth = 15°C/W rth = 30°C/W T0220 free air 60°C/W 25 40 100E+0 20 10E+0 15 1E+0 10 100E-3 5 10E-3 0 10E-6 0 100E-6 10 20 30 15 20 10 10 0 -50 5 -25 0 25 50 75 Figure 13 - Isd (A) vs Tj (°C) 8 100 125 150 0 -50 0 50 100 150 200 Figure 14 - Max. Cont. Ids ( A ) Vs Amb. Temperature ( °C) WWW.IRF.COM IPS5451/IPS5451S 10 0 single pulse 100 Hz rth=60°C/W dT=25°C 1kHz rth=60°C/W dT=25°C 100 10 10 1 0 .1 1 Rth std footprint/TO220 freeair Rth junction to case 0 .0 1 0.1 0 .0 0 1 0 .0 1 0 .1 1 10 100 Figure 15 -Max. I clamp ( A ) Vs Inductive Load ( m H ) Figure 16 - Transient Rth ( °C/W ) Vs Time (s) 10000 6 Eon I=Imax vs L (see fig.15) Eoff 1000 I=5 4 100 2 I=1A 10 1 0 0 5 10 15 20 Figure 17 - Eon, Eoff (mJ) vs Iout (A) WWW.IRF.COM 25 0 0.01 0.10 1.00 10.00 100.00 Figure 18 - Eon @ Vcc=14V (mJ) vs Inductance (mH) 9 IPS5451/IPS5451S 2.00 30 1.50 20 1.00 10 0.50 0.00 0 -50 -25 0 25 50 75 100 125 150 Figure 19 - I open load (A) vs Tj (°C) -50 -25 0 25 50 75 100 125 150 Figure 20 - Icc off (µA) vs Tj (°C) Case Outline - TO220 (5 lead) IRGB 01-3042 01 10 WWW.IRF.COM IPS5451/IPS5451S Case Outline - D2PAK (SMD220) - 5 Lead 01-3066 00 WWW.IRF.COM 11 IPS5451/IPS5451S Tape & Reel - D2PAK (SMD220) - 5 Lead 01-3071 00 / 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 8/7/2000 12 WWW.IRF.COM Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/