IPT010N08NM5ATMA1

IPT010N08NM5 MOSFET OptiMOSTM5Power-Transistor,80V HSOF Features Tab •N-channel,normallevel •Verylowon-resistanceRDS(on) •Idealforhighfrequencyswitchingandsync.rec. •100%avalanchetested •ExcellentgatechargexRDS(on)product(FOM) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Tab Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.05 mΩ ID 425 A Qoss 207 nC QG 178 nC Type/OrderingCode Package IPT010N08NM5 PG-HSOF-8 Final Data Sheet Gate Pin 1 Source Pin 2-8 Marking 010N08N5 1 RelatedLinks - Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 425 301 43 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C, RTHJA=40°C/W2) - 1700 A TA=25°C - - 817 mJ ID=150A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 3.8 W TC=25°C TA=25°C,RTHJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 1) Continuous drain current Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.2 0.4 °C/W - Thermal resistance, junction - ambient, RthJA 6 cm² cooling area - - 40 °C/W - Thermal resistance, junction - ambient, RthJA minimal footprint2) - - 62 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=280µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.96 1.2 1.05 1.7 mΩ VGS=10V,ID=150A VGS=6V,ID=75A Gate resistance1) RG - 1.6 2.4 Ω - Transconductance gfs 120 270 - S |VDS|≥2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 12000 16000 pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 2000 2600 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 86 150 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 35 - ns VDD=40V,VGS=10V,ID=150A, RG,ext=1.6Ω Rise time tr - 31 - ns VDD=40V,VGS=10V,ID=150A, RG,ext=1.6Ω Turn-off delay time td(off) - 82 - ns VDD=40V,VGS=10V,ID=150A, RG,ext=1.6Ω Fall time tf - 30 - ns VDD=40V,VGS=10V,ID=150A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 55 - nC VDD=40V,ID=100A,VGS=0to10V Qg(th) - 37 - nC VDD=40V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 37 56 nC VDD=40V,ID=100A,VGS=0to10V Switching charge Qsw - 55 - nC VDD=40V,ID=100A,VGS=0to10V Gate charge total Qg - 178 223 nC VDD=40V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=40V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 153 - nC VDS=0.1V,VGS=0to10V Qoss - 207 275 nC VDS=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 213 A TC=25°C - 1700 A TC=25°C - 0.87 1 V VGS=0V,IF=150A,Tj=25°C trr - 106 212 ns VR=40V,IF=100A,diF/dt=100A/µs Qrr - 318 636 nC VR=40V,IF=100A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 500 350 400 300 300 ID[A] Ptot[W] 250 200 200 150 100 100 50 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 200 101 10 1 µs 103 10 µs 102 100 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs 101 ZthJC[K/W] ID[A] 175 TC[°C] 1 ms 10 ms 10-1 100 DC 10-2 10-1 10-2 10-1 100 101 102 10-3 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 Diagram5:Typ.outputcharacteristics 1750 10 V Diagram6:Typ.drain-sourceonresistance 3.0 8V 7V 6V 1500 2.5 4.5 V 1250 ID[A] 1000 6V 750 RDS(on)[mΩ] 2.0 5V 1.5 7V 8V 1.0 500 10 V 0.5 5V 250 4.5 V 0 0 1 2 3 4 0.0 5 0 200 400 VDS[V] 600 800 1000 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 1750 3.0 1500 2.5 1250 175 °C 2.0 ID[A] RDS(on)[mΩ] 1000 750 1.5 1.0 500 25 °C 0.5 250 175 °C 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=150A;parameter:Tj 7 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 4.0 3.5 3.0 2.5 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 2.0 2800 µA 1.5 280 µA 1.0 0.4 0.5 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=150A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 25 °C, max 175 °C 175 °C, max 104 Ciss IF[A] C[pF] 103 Coss 103 102 102 Crss 101 0 10 20 30 40 50 60 70 80 101 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 16 V 40 V 64 V 8 102 VGS[V] IAV[A] 6 25 °C 100 °C 4 1 10 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 25 50 75 100 125 150 175 200 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=150Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 88 86 VBR(DSS)[V] 84 82 80 78 76 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 5PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 2 0 2 4mm EUROPEAN PROJECTION 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 0 SCALE 0.468 0.266 0.063 0.70 0.60 1.00 0.398 0.281 0.141 0.128 8 0.165 2.10 DOCUMENT NO. Z8B00169619 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.039 Figure1OutlinePG-HSOF-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2020-12-09 OptiMOSTM5Power-Transistor,80V IPT010N08NM5 RevisionHistory IPT010N08NM5 Revision:2020-12-09,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-12-09 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2020-12-09