IPT012N08N5

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-Transistor,80V IPT012N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTM5Power-Transistor,80V IPT012N08N5 1Description HSOF Features Tab •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.2 mΩ ID 300 A Qoss 208 nC QG(0V..10V) 178 nC Type/OrderingCode Package IPT012N08N5 PG-HSOF-8-1 1) Drain Tab Gate Pin 1 Source Pin 2-8 Marking 012N08N5 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 300 279 52 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=40K/W1) - 1200 A TC=25°C - - 817 mJ ID=150A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.2 0.4 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area1) RthJA - - 40 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 4 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=280µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.0 1.3 1.2 1.7 mΩ VGS=10V,ID=150A VGS=6V,ID=75A Gate resistance1) RG - 1.6 2.4 Ω - Transconductance gfs 120 250 - S |VDS|>2|ID|RDS(on)max,ID=100A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Min. Typ. Ciss - 13000 17000 pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 2000 2600 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 86 150 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 35 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω Rise time tr - 31 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω Turn-off delay time td(off) - 82 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω Fall time tf - 30 - ns VDD=40V,VGS=10V,ID=100A, RG,ext=1.8Ω 1) Max. Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Gate charge at threshold Values Unit Note/TestCondition - nC VDD=40V,ID=100A,VGS=0to10V 38 - nC VDD=40V,ID=100A,VGS=0to10V - 37 56 nC VDD=40V,ID=100A,VGS=0to10V Qsw - 56 - nC VDD=40V,ID=100A,VGS=0to10V Gate charge total Qg - 178 223 nC VDD=40V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=40V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 154 - nC VDS=0.1V,VGS=0to10V Qoss - 208 276 nC VDD=40V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 56 Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 2) Reverse recovery time 2) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 300 A TC=25°C IS,pulse - - 1200 A TC=25°C VSD - 0.88 1.2 V VGS=0V,IF=150A,Tj=25°C trr - 106 212 ns VR=40V,IF=100A,diF/dt=100A/µs Qrr - 318 636 nC VR=40V,IF=100A,diF/dt=100A/µs See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 6 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 350 350 300 300 250 200 ID[A] Ptot[W] 250 200 150 150 100 100 50 50 0 0 25 50 75 100 125 150 0 175 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 100 10 1 µs 103 10 µs 0.5 10-1 0.2 ID[A] ZthJC[K/W] 100 µs 102 1 10 1 ms 0.1 0.05 0.02 10 -2 0.01 10 ms 100 single pulse DC -1 10 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 800 3.0 10 V 5V 6V 7V 5.5 V 6V 700 2.5 600 2.0 RDS(on)[mΩ] 500 ID[A] 5.5 V 400 300 1.5 7V 1.0 5V 10 V 200 0.5 100 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0 100 200 300 VDS[V] 400 500 600 700 800 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 600 360 320 500 280 240 gfs[S] ID[A] 400 300 200 200 160 120 80 100 175 °C 0 0 2 40 25 °C 4 6 8 0 0 VGS[V] 80 120 160 200 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 8 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.5 4 2.0 2800 µA 3 max VGS(th)[V] RDS(on)[mΩ] 280 µA 1.5 typ 1.0 2 1 0.5 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 60 Tj[°C] 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=150A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 175 °C 25°C max 175°C max 103 Ciss Coss IF[A] C[pF] 104 103 102 102 101 Crss 101 0 20 40 60 100 0.0 0.5 VDS[V] 1.5 2.0 2.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 IF=f(VSD);parameter:Tj 9 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 103 10 9 40 V 8 25 °C 7 102 6 VGS[V] IAV[A] 100 °C 125 °C 20 V 5 60 V 4 1 10 3 2 1 100 100 101 102 103 0 0 tAV[µs] 50 100 150 200 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 90 VBR(DSS)[V] 85 80 75 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 6PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 2 0 2 4mm EUROPEAN PROJECTION 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 0 SCALE 0.468 0.266 0.063 0.70 0.60 1.00 0.398 0.281 0.141 0.128 8 0.165 2.10 DOCUMENT NO. Z8B00169619 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.039 Figure1OutlinePG-HSOF-8-1 Final Data Sheet 11 Rev.2.1,2015-02-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 RevisionHistory IPT012N08N5 Revision:2015-02-23,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-17 Release of final version 2.1 2015-02-23 Update active area about 0.3% WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.1,2015-02-23