IPT020N10N3

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM3Power-Transistor,100V IPT020N10N3 DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTM3Power-Transistor,100V IPT020N10N3 1Description HSOF Features Tab •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Extremelylowon-resistanceRDS(on) •Highcurrentcapability •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2 mΩ ID 300 A Type/OrderingCode Package IPT020N10N3 PG-HSOF-8-1 1) Drain Tab Gate Pin 1 Source Pin 2-8 Marking 020N10N3 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 300 212 A TC=25°C1) TC=100°C - 1200 A TC=25°C - - 800 mJ ID=150A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current 1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance junction - case Values Min. Typ. Max. RthJC - 0.2 0.4 K/W - Thermal resistance junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance junction - ambient, RthJA 6 cm2 cooling area 2) - - 40 K/W - 1) See figure 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 2.7 3.5 V VDS=VGS,ID=272µA - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.7 2.2 2 3.7 mΩ VGS=10V,ID=150A VGS=6V,ID=75A, Gate resistance RG - 1.9 2.9 Ω - Transconductance gfs 125 250 - S |VDS|>2|ID|RDS(on)max,ID=150A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 11200 14896 pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 2010 2673 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 69 138 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 34 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6Ω Rise time tr - 58 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6Ω Turn-off delay time td(off) - 84 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6Ω Fall time tf - 18 - ns VDD=50V,VGS=10V,ID=100A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 48 - nC VDD=50V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 27 - nC VDD=50V,ID=100A,VGS=0to10V Switching charge Qsw - 42 - nC VDD=50V,ID=100A,VGS=0to10V Gate charge total Qg - 156 207 nC VDD=50V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.3 - V VDD=50V,ID=100A,VGS=0to10V Output charge Qoss - 55 - nC VDD=50V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 Table7Reversediode Parameter Symbol Diode continous forward current Values Unit Note/TestCondition 300 A TC=25°C - 1200 A TC=25°C - 0.89 1 V VGS=0V,IF=150A,Tj=25°C trr - 86 172 ns VR=50V,IF=IS,diF/dt=100A/µs Qrr - 232 - nC VR=50V,IF=IS,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 6 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 450 350 400 300 350 250 200 250 ID[A] Ptot[W] 300 200 150 150 100 100 50 50 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 4 100 10 103 1 µs 10 µs 0.5 100 µs ZthJC[K/W] ID[A] 102 1 ms 101 10 ms 10-1 0.2 0.1 DC 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 1200 6 10 V 1000 5 4.5 V 7.5 V 5V 4 RDS(on)[mΩ] ID[A] 800 6V 600 400 6V 3 7.5 V 2 10 V 5V 200 1 4.5 V 0 0 1 2 3 4 0 5 0 200 400 VDS[V] 600 800 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 1200 300 1000 250 800 200 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 600 100 200 50 25 °C 175 °C 0 2 4 6 8 0 0 VGS[V] 50 100 150 200 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 1200 150 400 0 1000 ID[A] gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6 4.0 3.5 5 3.0 2750 µA 4 VGS(th)[V] RDS(on)[mΩ] 2.5 3 max 275 µA 2.0 1.5 typ 2 1.0 1 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=150A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 104 10 25 °C 175 °C 25 °C, 98% 175 °C, 98% Ciss 104 103 IF[A] C[pF] Coss 103 Crss 102 101 0 20 40 102 101 60 80 100 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 103 10 8 80 V 25 °C 102 VGS[V] IAS[A] 50 V 6 100 °C 150 °C 20 V 4 1 10 2 100 100 101 102 103 0 0 tAV[µs] 40 80 120 160 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 110 VBR(DSS)[V] 105 100 95 90 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 6PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.398 0.295 0.335 0.372 0.047 (BSC) 2 0.452 0.258 0.063 0.020 0.020 0.039 0 2 4mm EUROPEAN PROJECTION 0.468 0.266 0.281 0.141 0.128 8 0.165 2.10 0.90 0.70 1.30 0 SCALE 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 0.50 0.50 1.00 DOCUMENT NO. Z8B00169619 0.083 0.035 0.028 0.051 ISSUE DATE 14-06-2013 REVISION 01 Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 RevisionHistory IPT020N10N3 Revision:2014-02-17,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-02-17 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-02-17