IPT059N15N3

IPT059N15N3 MOSFET OptiMOSª3Power-Transistor,150V HSOF Features Tab •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 5.9 mΩ ID 155 A Type/OrderingCode Package IPT059N15N3 PG-HSOF-8 1) Drain Tab Gate Pin 1 Source Pin 2-8 Marking 059N15N3 RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 155 110 A TC=25°C TC=100°C - 620 A TC=25°C - - 520 mJ ID=150A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.2 0.4 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 40 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 150 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=270µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5 5.2 5.9 6.2 mΩ VGS=10V,ID=150A VGS=8V,ID=75A Gate resistance RG - 2.1 3.2 Ω - Transconductance gfs 86 172 - S |VDS|>2|ID|RDS(on)max,ID=150A 1) See figure 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Unit Note/TestCondition 7182 pF VGS=0V,VDS=75V,f=1MHz 630 838 pF VGS=0V,VDS=75V,f=1MHz - 10 19 pF VGS=0V,VDS=75V,f=1MHz td(on) - 25 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=1.6Ω Rise time tr - 35 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=1.6Ω Turn-off delay time td(off) - 46 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=1.6Ω Fall time tf - 14 - ns VDD=75V,VGS=10V,ID=100A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 5400 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 29 - nC VDD=75V,ID=100A,VGS=0to10V Gate to drain charge Qgd - 11 - nC VDD=75V,ID=100A,VGS=0to10V Switching charge Qsw - 24 - nC VDD=75V,ID=100A,VGS=0to10V Gate charge total Qg - 69 92 nC VDD=75V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=75V,ID=100A,VGS=0to10V Output charge Qoss - 178 - nC VDD=75V,VGS=0V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 155 A TC=25°C Diode pulse current IS,pulse - - 620 A TC=25°C Diode forward voltage VSD - 0.94 1.2 V VGS=0V,IF=150A,Tj=25°C Reverse recovery time trr - 146 292 ns VR=75V,IF=IS,diF/dt=100A/µs Reverse recovery charge Qrr - 478 - nC VR=75V,IF=IS,diF/dt=100A/µs 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 160 360 140 320 120 280 100 ID[A] Ptot[W] 240 200 160 80 60 120 40 80 20 40 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 100 µs 102 1 ms ZthJC[K/W] ID[A] 0.5 10 ms 1 10 DC 10-1 0.2 0.1 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 350 16 8V 10 V 4.5 V 7V 300 6.5 V 5V 12 250 RDS(on)[mΩ] ID[A] 200 6V 150 5.5 V 8 6V 8V 5.5 V 100 50 0 10 V 4 5V 4.5 V 0 1 2 3 4 0 5 0 50 VDS[V] 100 150 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 180 160 140 150 gfs[S] ID[A] 120 100 100 80 60 50 40 25 °C 175 °C 20 0 0 2 4 6 8 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 6 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 20 4.0 3.5 15 2700 µA 3.0 270 µA VGS(th)[V] RDS(on)[mΩ] 2.5 10 98% 2.0 1.5 typ 5 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=150A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 103 25 °C 175 °C 25°C, 98% 175°C, 98% Coss IF[A] C[pF] 102 102 101 Crss 101 100 0 20 40 60 80 100 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 120 V 8 75 V 102 25 °C VGS[V] 100 °C IAS[A] 30 V 6 125 °C 4 1 10 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 170 165 VBR(DSS)[V] 160 155 150 145 140 135 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 5PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.398 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 EUROPEAN PROJECTION 0.063 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 2 0.468 0.266 0.70 0.60 1.00 2 0 4mm 0.281 0.141 0.128 8 0.165 2.10 0 SCALE 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 DOCUMENT NO. Z8B00169619 0.039 Figure1OutlinePG-HSOF-8 Final Data Sheet 9 Rev.2.2,2017-05-16 OptiMOSª3Power-Transistor,150V IPT059N15N3 RevisionHistory IPT059N15N3 Revision:2017-05-16,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-01-27 Release of final version 2.1 2014-02-07 Insert aditional typ value (Rthjc) and max values (Crss,trr, Rg,Qg, Coss, Ciss) 2.2 2017-05-16 Update Zth Diagram and "T" condition in "Maximum ratings" TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.2,2017-05-16