IPT111N20NFDATMA1

IPT111N20NFD MOSFET OptiMOSª3Power-Transistor,200V HSOF Features Tab •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11.1 mΩ ID 96 A Type/OrderingCode Package IPT111N20NFD PG-HSOF-8 1) Drain Tab Gate Pin 1 Source Pin 2-8 Marking 111N20NF RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 96 76 A TC=25°C TC=100°C - 384 A TC=25°C - - 375 mJ ID=67A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 0.4 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 40 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 200 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=267µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 9 11.1 mΩ VGS=10V,ID=96A Gate resistance RG - 2.8 4.2 Ω - Transconductance gfs 82 163 - S |VDS|>2|ID|RDS(on)max,ID=96A 3) 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Defined by design. Not subject to production test 2) Final Data Sheet 3 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Unit Note/TestCondition 7000 pF VGS=0V,VDS=100V,f=1MHz 400 530 pF VGS=0V,VDS=100V,f=1MHz - 6 9.4 pF VGS=0V,VDS=100V,f=1MHz td(on) - 13 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Rise time tr - 11 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Turn-off delay time td(off) - 39 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Fall time tf - 13 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 5300 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 25 - nC VDD=100V,ID=96A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=100V,ID=96A,VGS=0to10V Switching charge Qsw - 17 - nC VDD=100V,ID=96A,VGS=0to10V Gate charge total Qg - 65 87 nC VDD=100V,ID=96A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=100V,ID=96A,VGS=0to10V Qoss - 162 - nC VDD=100V,VGS=0V Unit Note/TestCondition Gate to source charge 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 96 A TC=25°C IS,pulse - - 384 A TC=25°C VSD - 0.95 1.2 V VGS=0V,IF=96A,Tj=25°C trr - 125 250 ns VR=100V,IF=IS,diF/dt=100A/µs Qrr - 309 - nC VR=100V,IF=IS,diF/dt=100A/µs Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 100 350 80 300 60 ID[A] Ptot[W] 250 200 40 150 100 20 50 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 2 10 100 µs 0.5 ZthJC[K/W] ID[A] 1 ms 10 ms 101 DC 10-1 0.2 0.1 0.05 100 0.02 0.01 single pulse -1 10 10-1 100 101 102 103 10 -2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 350 30 10 V 8V 300 7V 6.5 V 6V 250 20 5.5 V ID[A] RDS(on)[mΩ] 200 150 5V 4.5 V 5V 5.5 V 6V 10 8V 100 10 V 4.5 V 50 0 0 1 2 3 4 0 5 0 50 VDS[V] 100 150 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 220 200 180 150 160 gfs[S] ID[A] 140 100 120 100 80 25 °C 175 °C 50 60 40 20 0 0 2 4 6 8 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 6 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 40 4.0 3.5 30 2670 µA 3.0 267 µA VGS(th)[V] RDS(on)[mΩ] 2.5 20 2.0 1.5 98% typ 10 1.0 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=96A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 25 °C 175 °C 25°C, 98% 175°C, 98% 103 Coss IF[A] C[pF] 102 102 101 101 100 Crss 0 20 40 60 80 100 120 140 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 3 10 10 8 160 V 102 100 V 6 40 V VGS[V] IAS[A] 25 °C 100 °C 125 °C 4 1 10 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=96Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 230 220 VBR(DSS)[V] 210 200 190 180 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD 5PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.398 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 EUROPEAN PROJECTION 0.063 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 2 0.468 0.266 0.70 0.60 1.00 2 0 4mm 0.281 0.141 0.128 8 0.165 2.10 0 SCALE 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 DOCUMENT NO. Z8B00169619 0.039 Figure1OutlinePG-HSOF-8 Final Data Sheet 9 Rev.2.1,2016-02-23 OptiMOSª3Power-Transistor,200V IPT111N20NFD RevisionHistory IPT111N20NFD Revision:2016-02-23,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-01-11 Release of final version 2.1 2016-02-23 Update Eas and Vds for Idss TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.1,2016-02-23