IPT210N25NFDATMA1

IPT210N25NFD MOSFET OptiMOSª3Power-Transistor,250V HSOF Features Tab •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 12 34 56 78 Table1KeyPerformanceParameters Parameter Value Unit VDS 250 V RDS(on),max 21.0 mΩ ID 69 A Type/OrderingCode Package IPT210N25NFD PG-HSOF-8 1) Drain Tab Gate Pin 1 Source Pin 2-8 Marking 210N25NF RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 69 54 A TC=25°C TC=100°C - 276 A TC=25°C - - 610 mJ ID=37A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.2 0.4 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 40 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 250 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=267µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=200V,VGS=0V,Tj=25°C VDS=200V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 18.0 21.0 mΩ VGS=10V,ID=69A Gate resistance RG - 2.8 4.2 Ω - Transconductance gfs 70 139 - S |VDS|>2|ID|RDS(on)max,ID=69A 3) 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Defined by design. Not subject to production test. 2) Final Data Sheet 3 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Unit Note/TestCondition 7000 pF VGS=0V,VDS=125V,f=1MHz 300 400 pF VGS=0V,VDS=125V,f=1MHz - 6 9.4 pF VGS=0V,VDS=125V,f=1MHz td(on) - 13 - ns VDD=125V,VGS=10V,ID=34.5A, RG,ext=1.6Ω Rise time tr - 13 - ns VDD=125V,VGS=10V,ID=34.5A, RG,ext=1.6Ω Turn-off delay time td(off) - 43 - ns VDD=125V,VGS=10V,ID=34.5A, RG,ext=1.6Ω Fall time tf - 13 - ns VDD=125V,VGS=10V,ID=34.5A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 5300 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 24 - nC VDD=125V,ID=69A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=125V,ID=69A,VGS=0to10V Switching charge Qsw - 16 - nC VDD=125V,ID=69A,VGS=0to10V Gate charge total Qg - 65 86 nC VDD=125V,ID=69A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=69A,VGS=0to10V Qoss - 144 - nC VDD=125V,VGS=0V Unit Note/TestCondition Gate to source charge 1) 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 69 A TC=25°C IS,pulse - - 276 A TC=25°C VSD - 0.9 1.2 V VGS=0V,IF=69A,Tj=25°C trr - 134 268 ns VR=125V,IF=IS,diF/dt=100A/µs Qrr - 406 - nC VR=125V,IF=IS,diF/dt=100A/µs Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 400 80 350 300 60 ID[A] Ptot[W] 250 200 40 150 100 20 50 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 102 100 µs 0.5 ZthJC[K/W] ID[A] 1 ms 101 10 ms DC 10-1 0.2 0.1 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 200 40 10 V 8V 7V 6.5 V 6V 150 30 5.5 V RDS(on)[mΩ] ID[A] 5V 100 4.5 V 50 0 0 1 2 5.5 V 5V 4.5 V 6V 20 8V 10 V 10 3 4 0 5 0 50 VDS[V] 100 150 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 200 180 160 150 140 gfs[S] ID[A] 120 100 100 80 175 °C 60 25 °C 50 40 20 0 0 2 4 6 8 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 6 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 70 4.0 3.5 60 2670 µA 3.0 50 267 µA 40 30 VGS(th)[V] RDS(on)[mΩ] 2.5 98% 2.0 1.5 typ 20 1.0 10 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=69A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 25 °C 175 °C 25°C, 98% 175°C, 98% 103 102 IF[A] C[pF] Coss 102 101 101 100 Crss 0 20 40 60 80 100 120 140 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 200 V 25 °C 125 V 6 125 °C VGS[V] IAS[A] 100 °C 101 50 V 4 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=69Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 290 280 VBR(DSS)[V] 270 260 250 240 230 220 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD 5PackageOutlines 1) partially covered with Mold Flash DIM A b b1 b2 c D D2 E E1 E4 E5 e H H1 H2 H3 H4 N K1 L L1 L2 L4 MILLIMETERS MIN MAX 2.20 2.40 0.70 0.90 9.70 9.90 0.42 0.50 0.40 0.60 10.28 10.58 3.30 9.70 10.10 7.50 8.50 9.46 1.20 (BSC) 11.48 6.55 11.88 6.75 INCHES MIN 0.087 0.028 0.382 0.017 0.016 0.405 MAX 0.094 0.035 0.390 0.020 0.024 0.416 0.398 0.295 0.335 0.372 0.047 (BSC) 0.452 0.258 EUROPEAN PROJECTION 0.063 0.083 ISSUE DATE 20-02-2014 0.051 REVISION 02 0.028 0.024 1.30 2 0.468 0.266 0.70 0.60 1.00 2 0 4mm 0.281 0.141 0.128 8 0.165 2.10 0 SCALE 0.130 0.382 7.15 3.59 3.26 8 4.18 1.60 DOCUMENT NO. Z8B00169619 0.039 Figure1OutlinePG-HSOF-8 Final Data Sheet 9 Rev.2.0,2016-01-11 OptiMOSª3Power-Transistor,250V IPT210N25NFD RevisionHistory IPT210N25NFD Revision:2016-01-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-01-11 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2016-01-11