IPT60R050G7
MOSFET
600VCoolMOSªG7SJPowerDevice
HSOF
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible
SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW
Tab
Tab
1
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~1nH).
•TOLLpackageisMSL1compliant,totalPb-freeandhaseasyvisual
inspectiongroovedleads.
•TOLLSMDpackagecombinedwithleadfreedieattachprocessenables
improvedthermalperformanceRth.
2
3
45
8
6
7
8
7
6
5
4
3
2
1
Drain
Tab
*1
Gate
Pin 1
Driver
Source
Pin 2
Benefits
•C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling
fasterswitchingleadingtohigherefficiency.
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•C7Goldcanreach28mΩininTOLL115mm2footprint,whereasprevious
BICC7600Vwas40mΩin150mm2D2PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•TOLLpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Source
Pin 3-8
*1: Internal body diode
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
50
mΩ
Qg.typ
68
nC
ID,pulse
135
A
ID,continuous @ Tj1 Hz)
Power dissipation
Ptot
-
-
245
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
n.a.
Ncm -
IS
-
-
44
A
TC=25°C
Diode pulse current
IS,pulse
-
-
135
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
25
V/ns
VDS=0...400V,ISD
