IPT60R075CFD7XTMA1

IPT60R075CFD7 MOSFET 600VCoolMOSªCFD7PowerTransistor HSOF CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™ CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesign-in process. Tab Tab 1 2 3 45 8 6 7 8 7 6 5 4 3 2 1 Drain Tab Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages *1 Gate Pin 1 Driver Source Pin 2 Source Pin 3-8 *1: Internal body diode Benefits •Excellenthardcommutationruggedness •Highestreliabilityforresonanttopologies •Highestefficiencywithoutstandingease-of-use/performancetradeoff •Enablingincreasedpowerdensitysolutions Potentialapplications SuitableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server, Telecom,EVCharging Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET devicestheplacementofthegateresistorisgenerallyrecommendedtobe ontheDriverSourceinsteadoftheGate. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 75 mΩ Qg,typ 51 nC ID,pulse 97 A Eoss @ 400V 5.9 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package IPT60R075CFD7 PG-HSOF-8 Final Data Sheet Marking 60R075F7 1 RelatedLinks see Appendix A Rev.2.3,2020-11-11 600VCoolMOSªCFD7PowerTransistor IPT60R075CFD7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.3,2020-11-11 600VCoolMOSªCFD7PowerTransistor IPT60R075CFD7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 33 21 A TC=25°C TC=100°C - 97 A TC=25°C - - 114 mJ ID=5.3A; VDD=50V; see table 10 EAR - - 0.57 mJ ID=5.3A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 5.3 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 186 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - - - - n.a. Ncm - IS - - 33 A TC=25°C Diode pulse current IS,pulse - - 97 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD