IPT60R090CFD7
MOSFET
600VCoolMOSªCFD7PowerTransistor
HSOF
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe
successortotheCoolMOS™CFD2seriesandisanoptimizedplatform
tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge
(ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class
reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™
CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s
fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof
afastswitchingtechnologytogetherwithsuperiorhardcommutation
robustness,withoutsacrificingeasyimplementationinthedesign-in
process.
Tab
Tab
1
2
3
45
8
6
7
8
7
6
5
4
3
2
1
Drain
Tab
Features
•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Qrr)
•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•Best-in-classRDS(on)inSMDandTHDpackages
*1
Gate
Pin 1
Driver
Source
Pin 2
Source
Pin 3-8
*1: Internal body diode
Benefits
•Excellenthardcommutationruggedness
•Highestreliabilityforresonanttopologies
•Highestefficiencywithoutstandingease-of-use/performancetradeoff
•Enablingincreasedpowerdensitysolutions
Potentialapplications
SuitableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET
devicestheplacementofthegateresistorisgenerallyrecommendedtobe
ontheDriverSourceinsteadoftheGate.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
90
mΩ
Qg,typ
42
nC
ID,pulse
79
A
Eoss @ 400V
4.8
µJ
Body diode diF/dt
1300
A/µs
Type/OrderingCode
Package
IPT60R090CFD7
PG-HSOF-8
Final Data Sheet
Marking
60R090F7
1
RelatedLinks
see Appendix A
Rev.2.3,2020-10-28
600VCoolMOSªCFD7PowerTransistor
IPT60R090CFD7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.3,2020-10-28
600VCoolMOSªCFD7PowerTransistor
IPT60R090CFD7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
28
18
A
TC=25°C
TC=100°C
-
79
A
TC=25°C
-
-
93
mJ
ID=4.8A; VDD=50V; see table 10
EAR
-
-
0.47
mJ
ID=4.8A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
4.8
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
160
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
-
-
-
n.a.
Ncm -
IS
-
-
28
A
TC=25°C
Diode pulse current
IS,pulse
-
-
79
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
VDS=0...400V,ISD
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